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Performance of MOSFETs: Drain Current and Power Dissipation

Permissible loss and drain current, which are typical maximum ratings of MOSFET, are calculated as follows.
(A different expression of current is adopted for some products.)
Power dissipation is calculated by thermal resistance and channel temperature. Drain current is calculated by the calculated power dissipation and ON resistance, using Ohm’s law.

PD:Power dissipation

⇒ Power loss allowed in designated temperature condition of the device

Power dissipation

ID:Drain current

⇒ DC rating: DC current that flows in forward direction. (defined at room temperature)

Drain current

IDp:Pulse drain current

⇒ Maximum drain current at designated pulse width. Generally, about 4 times DC current

Pulse drain current

Chapter III : Transistors

Types of Transistors
Bipolar Transistors (BJTs)
Bias Resistor Built-in Transistors (BRTs)
Junction Field-Effect Transistors (JFETs)
Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)
Differences between BJT and MOSFET
Structure and Operation of MOSFET
MOSFET Performance Improvement: Decision Factors of RDS(ON)
MOSFET Performance Improvement: Approach to Low RDS(ON)
MOSFET Performance Improvement: Super-Junction MOSFETs (SJ-MOS)
Summary of MOSFET Features by Structure
Performance of MOSFETs: Avalanche Capability
Performance of MOSFETs: Characteristic of Capacitance
Performance of MOSFETs: Safe Operating Area(or Area of Safe Operation)
Insulated-Gate Bipolar Transistors (IGBTs)
Operation of Insulated-Gate Bipolar Transistors (IGBTs)
Performance Improvement of IGBTs: Evolution of Vertical Design
What are RC-IGBTs and IEGTs?
Application of IGBTs
Comparison of Forward Characteristics of IGBTs and MOSFETs
Comparison of Transistors by Structure
Datasheets of MOSFET: Maximum Ratings
Datasheets of MOSFET: Electrical Characteristics
Datasheets of MOSFET: Capacitance and Switching Characteristics
Datasheets of MOSFET: Body Diode

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