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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Why do Toshiba's power MOSFETs exhibit larger gate-source leakage current, IGSS, than those of other companies?

Toshiba's Power MOSFETs generally have a Zener diode between gate and source for electrostatic protection, which contributes additional leakage current to IGSS. Therefore, Power MOSFETs with a Zener diode exhibit a slightly larger IDSS than those without one (which cause leakage current only from a dielectric film).