-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
ApplicationsAutomotive
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
IndustrialInfrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
Consumer/PersonalIoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
Knowledge
- Where To Buy View
-
My ToshibaSemicon
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
Why do Toshiba's power MOSFETs exhibit larger gate-source leakage current, IGSS, than those of other companies?
Toshiba's Power MOSFETs generally have a Zener diode between gate and source for electrostatic protection, which contributes additional leakage current to IGSS. Therefore, Power MOSFETs with a Zener diode exhibit a slightly larger IDSS than those without one (which cause leakage current only from a dielectric film).