-
My ToshibaSemicon
- General Top View
-
SEMICONDUCTOR View
-
ApplicationsAutomotive
Body Electronics
xEV
In-Vehicle Infotainment
Advanced Driver-Assistance Systems (ADAS)
Chassis
IndustrialInfrastructure
BEMS/HEMS
Factory Automation
Commercial Equipment
Consumer/PersonalIoT Equipment
Healthcare
Wearable Device
Mobile
Computer Peripherals
-
Products
Products
-
Design & Development
-
Knowledge
Knowledge
- Where To Buy View
-
- STORAGE View
- COMPANY View
- Part Number Search
- Cross Reference Search
- Keyword Search
- Parametric Search
- Stock Check & Purchase
This webpage doesn't work with Internet Explorer. Please use the latest version of Google Chrome, Microsoft Edge, Mozilla Firefox or Safari.
require 3 characters or more.
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
require 3 characters or more.
What is the principle of operation of the IGBT?
The equivalent circuit of an IGBT is shown below. When both the gate-emitter (G-E) and collector-emitter (C-E) paths are positively biased, the N-channel MOSFET conducts, causing drain current to flow. This drain current also flows to the base of QPNP and causes the IGBT to turn on. Since the DC current gain (α) of QPNP is very small, almost the entire emitter current (IE(pnp)) flows as base current (IB(pnp)). However, part of IE(pnp) flows as collector current (IC(pnp)). The IC(pnp) does not turn on QNPN because it bypasses the RBE inserted between the base and emitter of the QNPN.
Therefore, almost the entire collector current of the IGBT flows as the drain current of the N-channel MOSFET via the emitter-base paths of QPNP. At this time, holes are injected into the high-resistance drift region of the N-channel MOSFET from the emitter of QPNP. This causes the resistivity of the drift region (Rd(MOS)) to decrease considerably, reducing the on-resistance during a conduction period. This phenomenon is called conductivity modulation.
Turning off the gate (G) signal causes the N-channel MOSFET to turn off and therefore causes the IGBT to turn off.