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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Diodes

Clicking on product's category allows you to see Diodes Part Naming Conventions.

Diode (JEITA Registration Products)

Example of Diode

1. The value that subtracted 1 from the total number of terminals

2. S stands for Semiconductor

3. The kind of diode

  • S: Diode of general-purpose use, detection use, frequency conversion use, and switching use
  • V: Variable capacitance diode

4. Serial number
JEITA registration numbers

SiC Schottky Barrier Diodes

Example of SiC Schottky Barrier Diodes

1. Toshiba SiC Schottky Barrier Diodes

2. Current rating IF(DC)
Ex.) 10 : IF(DC) = 10 A

3. Package
A : TO-220F-2L
E : TO-220-2L
J : TO-3P(N)
P : DPAK
N : TO-247
V : DFN8×8

4. Voltage rating VRRM
Display value×10 = VRRM
Ex.) 65 : VRRM = “65”×10 = 650 V

5. Generation
C, D : 1st Generation
F      : 2nd Generation

6. Connection
None : 1 chip
B       : 2 chips & Center tap type

Schottky barrier diode

Product Naming Conventions

Starting with the new SBD series, the product naming conventions have been changed as shown below. Product names denote packaging, current rating, voltage rating and go on.

Product Naming Conventions

1. Toshiba Schottky barrier diode/package style
CB: CST2B Package
CC: CST2C Package
CE: ESC Package
CM: M-Flat Package
CR: S-Flat Package
CT: CST2 Package
CU: US-Flat/USC Package
CV: UFV Package

2. Number of pins / Internal Connection
S: 2pin Single
J: 5pin Parallel

3. Average forward current,IF(AV)
Example: 08: 0.8A, 10: 1.0A

4. Product feature
I: Low forward voltage & low leakage current (New SBD series)
F: Low forward voltage
R: Low leakage current
S: Super low forward voltage

5. Reverse voltage, VRRM
Example: 30: 30 V

6. Suffix that indicates an additional feature

Old Naming Conventions

Example of Schottky barrier diode

1. DS stands for Toshiba Schottky barrier diode.

2. Device feature
This letter shows the feature of a device.
R: Low leakage current type.
F: Low forward voltage type.

3. Current rating
Examples: 07: 0.7 A, 10: 1 A

4. Circuit configuration and number of pins

5. Voltage rating
Examples: 30: 30 V, 15: 15 V

6. Revision
The additional symbol for upgraded versions

7. Package style
This letter shows the package style.

New Naming Conventions

Example of Schottky barrier diode

1. Package
Examples: CE: ESC, CU: USC, CB: CST2B

2. Pin count
Example: S: 2-pin

3. Current rating
Example: 07: 0.7 A

4. Device type
Examples: F: Low-voltage, R: Low-leakage

5. Voltage rating
Example: 30: 30 V

6. Revision or functional category (A to Z)

ESD-Protection Diodes

Example of ESD-Protection Diodes

1. Toshiba ESD-protection diode

2. Package pin count
Note: The digit 7 denotes a 6-pin package.

3. Internal configuration
Example: A: Common anode

4. Clamp voltage(VBR

5. Series
Example: L: Ultra-high-speed

6. Package style

Radio-Frequency Diodes

Example of Radio-Frequency Diodes

1. Toshiba RF diode

2. Diode type
P: PIN diode
V: Variable-capacitance diode
H: Schottky barrier diode
S: Switching diode

3. Pin count

4. Chip configuration
S: Single
C: Multiple diodes with common cathode
P: Parallel-connected diodes
L: Symmetrically connected diodes
D: Series-connected diodes

5. Number per diode type

6. Package
SC: SC2
CT: CST2、CST3
CTC: CST4C
FS: fSC
E: ESC
U: USC、USM、USQ
CR: S-FLAT
TU: UFM
T: TESQ
No suffix: S-Mini

Conventional Series

1SV*** : Variable-capacitance and PIN diodes

1SS*** : Schottky barrier and switching diodes

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