MT3S113TU

EOL announced

Radio-frequency SiGe Heterojunction Bipolar Transistor

Description

Application Scope VHF/UHF band low noise, low distortion amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-323F (UFM)
Package Image Toshiba MT3S113TU Radio-frequency SiGe Heterojunction Bipolar Transistor product UFM package image
Package Code SOT-323F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 0.1 A
Collector power dissipation (mounted on board) PC 900 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 5.3 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Insertion Gain (Typ.) |S21|2 f=1GHz 12.5 dB
Transition frequency (Typ.) fT - 11.2 GHz
Noise Figure (Typ.) NF f=1GHz 1.15 dB

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