Small-signal MOSFET 2 in 1
| Application Scope | High-Speed Switching |
|---|---|
| Polarity | N-ch×2 |
| Generation | π-MOSⅥ |
| Internal Connection | Independent |
| Component Product (Q1) | SSM3K43FS |
| Component Product (Q2) | SSM3K43FS |
| AEC-Q101 | Qualified(*) |
| RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
| Toshiba Package Name | SOT-363 (US6) |
|---|---|
| Package Image |
|
| JEITA | SC-88 |
| Package Code | SOT-363 |
| Pins | 6 |
| Mounting | Surface Mount |
| Width×Length×Height (mm) |
2.0×2.1×0.9 |
| Package Dimensions | View |
| Land pattern dimensions | View |
| Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |
![]() Download from UltraLibrarian® in your desired CAD format |
| SamacSys CAD model (Symbol, Footprint and 3D model) |
Download from SamacSys |
Please refer to the link destination to check the detailed size.
|
(Note1) |
Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. |
|
(Note2) |
SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys. |
|
(Note3) |
Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. |
| Characteristics | Symbol | Rating | Unit |
|---|---|---|---|
| Drain-Source voltage (Q1/Q2) | VDSS | 20 | V |
| Gate-Source voltage (Q1/Q2) | VGSS | +/-10 | V |
| Drain current (Q1/Q2) | ID | 500 | mA |
| Power Dissipation | PD | 0.2 | W |
| Characteristics | Symbol | Condition | Value | Unit |
|---|---|---|---|---|
| Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 1.0 | V |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.5V | 1.52 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=1.8V | 1.14 | Ω |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=2.5V | 850 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4.5V | 660 | mΩ |
| Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=5V | 630 | mΩ |
| Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 46 | pF |
| Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4V | 1.23 | nC |
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