Passion for Power

With densities up to 50% higher than the first generation, Toshiba's devices and can handle significantly higher forward surge currents.  The use of SiC semiconductors helps designers to improve efficiency, reduce heat dissipation and save space in high-speed power switching designs.  SiC power devices also offer stable operation over a wider temperature range than silicon alternatives – even at high voltages and currents.

Key product:

SiC Schottky barrier diodes

The power MOSFET uses SiC, a new material, achieving high voltage resistance, high-speed switching, and low On-resistance compared to conventional silicon (Si) MOSFETs. Therefore, it exhibits low power consumption and system downsizing.

This new device realizes low input capacitance, a low gate-input charge, and low drain-to-source On-resistance. Compared with the GT40QR21, Toshiba’s 1200V silicon insulated gate bipolar transistor (IGBT), the TW070J120B reduces turn-off switching loss by about 80% and switching time (fall time) by about 70%, while delivering low On-voltage characteristics with a drain current of 20A or less^[2].

The TW070J120B will contribute to higher efficiency by reducing power loss in industrial applications, AC-DC converters, photovoltaic inverter, and large capacity bidirectional DC-DC converters, and will also contribute to a reduction in equipment size.

Key product:

TW070J120B

The new 650V-rated N-channel power MOSFETs strengthen Toshiba's latest DTMOSVI series with highly appealing performance parameters. These devices offer designers a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (Q_GD) figure of merit (FoM) when compared to the previous DTMOS generation.  As a consequence, they can raise the efficiency of switch-mode power supplies thereby enabling a substantial decrease in switching losses, over previous generations.

Key product:

DTMOSVI Overview

Further links:

DTMOS Flyer

Applications:

• Switching power supplies in industrial equipment, data centers and power conditioners of photovoltaic generators 

TPH2R408QM and TPN19008QM are based upon Toshiba's latest generation U-MOSX-H process that exhibit a reduction of around 40% in drain-source on-resistance (Rds(ON)) compared to corresponding 80V products in earlier processes.  

Key product:

TPH2R408QM

TPN19008QM

Further links:

New 80V N-channel press release

U-MOS Flyer

Applications:

• Telecom Power supply
• Industrial Power supply synchronous rectification at 24~28V output Voltage
• Motor drive Power stage at 36V power Tool

The TPD4162F is suitable for any applications with input signals in the range up to 220V AC. It contains a PWM circuit, 3-phase decoder, level shifting high-side driver and low side driver with embedded IGBTs and FRDs. Multiple protection features include current limit, over current protection (OCP), thermal shutdown and under voltage lockout (UVLO).  

Key products:

TPD4162F

The TLP5231 is equipped with additional built-in functionality, incorporating overcurrent detection, implemented by sensing V_CE(sat) as well as undervoltage lock out (UVLO), both of which provide an open collector fault signal to the primary side. These new features significantly ease the process of gate drive circuit design.

Key products:

TLP5231

The new TLP2363 is rated for a wide operating temperature range (-40 to +105°C). The threshold input current (IFHL) is specified with min. 0.3mA and max. 2.4mA thereby ensuring conformance to the digital input standard IEC 61131-2 type 1. Uniquely for this type of device, all that is required to complete the design is a bridge diode and a suitable resistor for current control. The short propagation delay of just 80ns is ideal for use with high-speed systems.

Key product:

TLP2363

The two devices have typical data transfer rates of 5Mbps (TLP2312) and 20Mbps (TLP2372) and are specifically designed to operate with low voltage rails, down to 2.2V. This allows them to work with the lower voltages used by many peripheral circuits, including those found in 2.5V LVCMOS, as well as accommodating voltages as high as 5.5V.  

Key products:

TLP2312

TLP2372

Photorelays offer many advantages over mechanical relays such as long operational life, low-current drive and fast response. Widely used for contact switching in various industrial applications, Toshiba photorelays provide low R_ON, low C_OFF devices in various packages featuring high current and high off-state voltage.

• 1µA maximum standby current
  
• Wide operating voltage from 4.5V to 44V
• Capable of up to 3A applications
• Enables multi-product sourcing strategies due to industry standard   package and pinout

Key product:

TB67H450FNG

TB67H451FNG

• Fast regulation of speed fluctuations caused by changes in power supply voltage and torque load
• No external MCU required due to embedded non-volatile memory
• No speed control software development required

• Optimizes efficiency throughout the whole speed range
• Simplifies motor tuning

Key products:

TC78B027FTG

TC78B025FTG

Further links:

TC78B027FTG press release

Advantage of Intelligent Phase Control

Intelligent Phase Control detects the motor current phase and feeds back the information for auto lead angle control. When a motor application has a sensor, the phase of the Hall signal is automatically adjusted to match that of the motor drive current.
High efficiency is achieved regardless of the rpm, load torque and power supply voltage of a motor. Intelligent Phase Control also helps reduce the number of external parts necessary for lead angle adjustment.

• Up to 48% reduction in motor current
• Prevention of stall and step loss
• Significant heat reduction^*1 in motor and controller

_{Note:*1 : 30°C lower chip temperature has been achieved in a Toshiba experiment}

Key product:

TB67S128FTG

Overview Stepping Motor Driver

Further links:

Active Gain Control Flyer

The reference design combines Toshiba’s highly efficient low-voltage MOSFET devices with Toshiba’s dedicated motor control MCU and thus provides a very compact but flexible platform for the control and drive of BLDC motors in power tools. The Motor current is generated by a 3-phase inverter with 200W output power stage using the Toshiba TPH1R204PB low-voltage MOSFET. This device features industry-leading RDS(ON) in a 5×6mm SOP Advanced package and provides low spike generation helping to prevent EMI effects. 

Main PCB
•    Compact form factor (60 x 50 mm)
•    3-phase inverter, 200W output stage
•    Speed control switch
•    Pilot lamp

* sofware currently under development

Key products:

TPH1R204PB High Efficient LV MOSFET

TC75W58FK Comparator

Further links:

Design data download: Cordless Power Tool Reference Design

Low voltage (U-MOS) Flyer

• Inverter for three 3-phase brushless DC motors, up to 750W each
• AGV moving with three omni wheels of 203mm diameter
• Line tracing through infrared sensor system
  

Key products:

U-MOSX-H TPH2R408QM MOSFET

TMPM4KQFDFG 160MHz Motor MCU

• Robot arm movement by single MCU controlling 3 motors
• Inverter drives 3-phase BLDC motors, 200W power stage

Key products:

TMPM4KNFDFG Motor MCU (160MHz)

U-MOS IX TPW3R70APL low-voltage MOSFET

M4K Motor Control MCU Series

TLP2370 coupler, TCR3DM33 LDO, TC7QPB9307FK level shifter

Further links:

Servo Drive Reference Flyer

Low Voltage Drop-Out Regulator Flyer

Vector Engine Flyer

Withstanding a drain-source voltage (V_DSS) of 100V the new XK1R9F10QB is rated for a continuous drain current (I_D) of 160A, or 480A if pulsed (I_DP) and can be operated with a channel temperature of 175°C.

Key products:

XK1R9F10QB  

Further links:

Automotive MOSFETs Product Overview

Applications:

• Automotive equipment applications such as load switches, switching power supplies and driving of motors

Designed specifically for modern 48V system applications, the devices are suited to use in boost converters for integrated starter generators (ISG) and LED headlights as well as motor drives, switching regulators and load switches. They are available in a small surface mount SOP Advance wettable flanks package.

Key products:

XPH4R10ANB Power MOSFET (N-ch single 60V<VDSS≤150V)

XPH6R30ANB Power MOSFET (N-ch single 60V<VDSS≤150V)

These devices meet the increasing need of the industry for smaller, efficient MOSFETs. They are part of Toshiba`s smaller package portfolio which offer a wide choice of package sizes ranging from 1x1 mm-class ultra-small packages to 3x3 mm, which contributes to miniaturization of sets by reducing the mounting area and increasing power density. By combining latest wafer processes with low-resistance packaging technologies, an industry-leading level of low on-resistance MOSFET is achieved.

• A projector emits Head-up Display typical information content
• The light-beam is reflected to an upwards oriented screen
• A stepper motor controlled mirror moves the content up/downcontrol)

Key product:

TB9120FTG

Further links:

Stepper Motor Driver Flyer

Advantage of Intelligent Phase Control

Intelligent Phase Control detects the motor current phase and feeds back the information for auto lead angle control. When a motor application has a sensor, the phase of the Hall signal is automatically adjusted to match that of the motor drive current.
High efficiency is achieved regardless of the rpm, load torque and power supply voltage of a motor. Intelligent Phase Control also helps reduce the number of external parts necessary for lead angle adjustment.