Radio-Frequency Devices
Clicking on product's category allows you to see Radio-Frequency Devices Part Naming Conventions.
Radio-Frequency Diode (EIAJ registration products)
1. The value that subtracted 1 from the total number of terminals
2. S stands for Semiconductor
3. The kind of diode
This section shows the kind of the diode being used.
( It is omitted in certain cases. )
- S: diode of general-purpose use, detection use, fequency conversion use, and switching use
- V: variable capacitance diode, PIN diode
- Z: zener diode
4. Serial number
EIAJ registration numbers
Radio-Frequency Diode (EIAJ un-registration products)
1. JD means High-frequency diode
2. The kind of devices
This section shows the kind of the devices being used.
It is classified into H, P, S, and V by the devices being loaded.
- H: schottky barrier diode
- P: PIN diode
- S: band switching diode
- V: variable capacitance diode
3. The number of terminals
4. Internal connection
This section shows the kind of the internal connection of a product.
- S: single
- C: cathode common
- P: parallel
5. Serial number
6. Package type
| (No mark) | S-MINI |
|---|---|
| U | USC, USQ |
| T | TESC, TESQ |
| E | ESC |
| S | sESC |
| FS | fSC |
| CT | CST3, CST4 |
| SC | SC2 |
| FV | VESM |
Radio-Frequency Transistor (EIAJ registration products)
1. The value that subtracted 1 from the total number of terminals
2. S stands for Semiconductor
3. The kind of circuit
This section shows the kind of the circuit of a product.
It is classified into form A to K by the circuit of a product.
- A: a transistor of high-frequency and PNP structure
- B: a transistor of low-frequency and PNP structure
- C: a transistor of high-frequency and NPN structure
- D: a transistor of low-frequency and NPN structure
- J: a transistor of effective transistor ( FET )
- K: an Nch field effective transistor ( FET )
4. Serial number
EIAJ registration numbers.
5. Changes
The additional symbol which shows some changes.
Radio-Frequency Transistor (Microwave transistor)
1. MT stands for Toshiba Microwave transistor
2. The number of terminals
3. Internal connection
This section shows the kind of the internal connection of a procuct.
- S: Single
- C: Cascade arrangement
- P: Parallel arrangement
- L: Lateral arrangement
4. Serial number
5. Changes
The additional symbol which shows some changes
6. Package type
This section shows the package type.
| (No mark) | S-MINI, SMQ |
|---|---|
| U | USM, USQ, US6 |
| S | SSM, sES6 |
| T | TESM, TU6, TESQ |
| E | ES6 |
| FS | fSM, fS6 |
| CT | CST3 |
Radio-Frequency Power Transistor (EIAJ registration products)
1. The value that subtracted 1 form the total number of terminals
2. S stands for Semiconductor
3. The kind of circuit
This section shows the kind of the circuit of a product.
It is classified into from A to K by the circuit being used.
- A: a transistor of high-frequency and PNP structure
- B: a transistor of low-frequency and PNP structure
- C: a transistor of high-frequency and NPN structure
- D: a transistor of low-frequency and NPN structure
- J: a P-ch field effective transistor (FET)
- K: an N-ch field effective transistor (FET)
4. Serial number
EIAJ registration numbers
5. Changes
The additional symbol which shows some changes.
Radio-Frequency Power Transistor (RF-MOSFET)
1. RFM stands for Toshiba RF-MOSFET.
2. This section shows the output power(W) of a procuct.
- 00: 0.03W
- 07: 7.0W
- 12: 11.5W
3. This section shows the operating frequency(MHz) of a procuct.
- U: 400 to 520MHz
- M: 700 to 950MHz
4. This section shows the operating voltage(V) of a procuct.
- 4: 4.5V
- 7: 7.2V
5. Other information
6. Package type
It shows the package type.
- U: USQ
- M: PW-MINI
- X: PW-X
Radio-frequency Power module
1. S-A means Toshiba RF power module
2. Frequency band
- U: UHF
- V: VHF
3. Serial number
4. Changes
The additional symbol which shows some changes.
5. Frequency band subdivision
Magnitude relation is as follows.
VL < L < M < H < VH < SH
Cell packs for Radio-frequency use
1. Materials, Applications
This section shows the materials and applications.
The details are shown in the following table.
| 1 | Materials | Applications |
|---|---|---|
| TA40 | Si | Crystal oscillators |
| UHF Wide band Amp. | ||
| VHF-UHF Wide band Amp. | ||
| VHF (Wide) RF Amp. | ||
| Cable modems | ||
| TA41 | VHF-UHF Amp. MIX | |
| VHF-UHF DBM | ||
| 1.9GHz U/C MIX | ||
| 1 GHz band D/C IC | ||
| TA43 | BS/CS D/C IC | |
| TG20 | GaAs | Power Amp. for PHS ( Personal Handy phone System ) |
| TG22 | PHS SPDT Sw. | |
| General purpose SPDT Sw. | ||
| ATT |
2. Serial number
3. Package type
- FU: USV
- F / AF: SMQ / SMV / SM6 / SM8 / SSOP20
- FE: ESV / ES6
- FT: TU6
- FC: CS6
- S: sES6
- TU: UF6
- CTB: CST6B
- CT: CST20