MOSFET4 Leads Package DFN8x8(TK25V60X) Application Circuit

This reference design provides example circuit for maximize switching performance and efficiency using 4 lead MOSFET package (DFN8x8) which reduces package inductance.

Device and prastic inductance of PCB trace of MOSFET4 leads package DFN8x8(TK25V60X) application circuit.
Device and prastic inductance of PCB trace
Simulation circuit of MOSFET4 leads package DFN8x8(TK25V60X) application circuit.
Simulation circuit

Description

  • Introduction of features of the DFN8x8 package, a 4 leads structure, which has a source terminal for gate drive circuit additionally compared with the conventional 3 leads pacckage.
  • Describing the 4 leads package feature that achievs less oscillation of gate signal and lower switching loss than the 3 leads because the 4 leads package is not affected by parasitic inductance of source wiring

Reference design files

Design, Document

“Design・Document” contains the documents listed below.

Name Date

Design, File

“Design・File” contains the contents listed below.

Name Date

Toshiba items

Part Number Device Category Portion Usage Description
TK25V60X MOSFET   DTMOSIV-H/600V/135mΩ(max)@VGS=10V/High-speed switching type/DFN8x8

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