MOSFET4 Leads Package DFN8x8(TK25V60X) Application Circuit

This reference design provides example circuit for maximize switching performance and efficiency using 4 lead MOSFET package (DFN8x8) which reduces package inductance.

Device and prastic inductance of PCB trace of MOSFET4 leads package DFN8x8(TK25V60X) application circuit.
Simulation circuit of MOSFET4 leads package DFN8x8(TK25V60X) application circuit.

Description

  • Introduction of features of the DFN8x8 package, a 4 leads structure, which has a source terminal for gate drive circuit additionally compared with the conventional 3 leads pacckage.
  • Describing the 4 leads package feature that achievs less oscillation of gate signal and lower switching loss than the 3 leads because the 4 leads package is not affected by parasitic inductance of source wiring

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch 500V<VDSS≤700V) N-ch MOSFET, 600 V, 0.135 Ω@10V, DFN 8 x 8, DTMOSⅣ-H

Related Documents

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