Parallel Operation of MOSFET(TPH1R306PL) Application Circuit

This reference design provides example of simulation models/circuit and results for parallel operation using 60V MOSFET to increase output power.

Device and prastic inductance of PCB trace of parallel operation of MOSFET(TPH1R306PL) application circuit.
Simulation circuit of PCB trace of parallel operation of MOSFET(TPH1R306PL) application circuit.

Description

  • Description of the MOSFET behavior on parallel operation by circuit simulation with TPH1R306PL(SOP Advance package), a 60V U-MOSIX-H product, suitable for secandary side synchrnous rectification circuit for AC-DC power supply and DC-DC power supply and primary side for DC-DC power supply.
  • Showing the point of note for parallel operation and offering the solution to achieve more output power.

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Portion Usage Description
Power MOSFET (N-ch single 30V<VDSS≤60V) N-ch MOSFET, 60 V, 0.00134 Ω@10V, SOP Advance, U-MOSⅨ-H

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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