Parallel Operation of MOSFET(TPH1R306PL) Application Circuit

This reference design provides example of simulation models/circuit and results for parallel operation using 60V MOSFET to increase output power.

Device and prastic inductance of PCB trace
Simulation circuit

Features

  • MOSFET behavior in parallel operation analyzed via circuit simulation
  • Device: TPH1R306PL (SOP Advance package), 60V U-MOSIX-H series
  • Suitable for Secondary-side synchronous rectification for AC-DC and DC-DC power supplies, and primary-side for DC-DC power supplies
  • Provides solution to achieve higher output power

Design Documents

Materials for designers, such as an overview of circuit operation and explanations of design considerations. Please click on each tab to view the contents.

Design Data

Provides circuit data that can be loaded into EDA tools, PCB layout data, and data used in PCB manufacturing. Available in formats from multiple tool vendors. You can freely edit it with your preferred tool.

Used Toshiba Items

Part Number Device Category Application Area – Qty Description
Power MOSFET (N-ch single 30V<VDSS≤60V) N-ch MOSFET, 60 V, 0.00134 Ω@10V, SOP Advance, U-MOSⅨ-H

Related Documents

We provide materials useful for designing and considering similar circuits, such as application notes for installed products. Please click on each tab to view the contents.

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