Parallel Operation of MOSFET(TPH1R306PL) Application Circuit

This reference design provides example of simulation models/circuit and results for parallel operation using 60V MOSFET to increase output power.

Device and prastic inductance of PCB trace of parallel operation of MOSFET(TPH1R306PL) application circuit.
Simulation circuit of PCB trace of parallel operation of MOSFET(TPH1R306PL) application circuit.

說明

  • Description of the MOSFET behavior on parallel operation by circuit simulation with TPH1R306PL(SOP Advance package), a 60V U-MOSIX-H product, suitable for secandary side synchrnous rectification circuit for AC-DC power supply and DC-DC power supply and primary side for DC-DC power supply.
  • Showing the point of note for parallel operation and offering the solution to achieve more output power.

設計文件

設計・文件 包含以下文件。

設計數據

設計數據包含以下內容。

使用東芝項目/產品

器件型號 器件目錄 使用部位・數量 說明
Power MOSFET (N-ch single 30V<VDSS≤60V) N-ch MOSFET, 60 V, 0.00134 Ω@10V, SOP Advance, U-MOSⅨ-H

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