Cross Reference Search
require 3 characters or more.
About information presented in this cross reference
The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
Keyword Search
Parametric Search
Stock Check & Purchase
Select Product Categories
Select Application
Find everything you need for your next product design. Simply select an application and click through to the block diagram to discover our semiconductor solutions.
Electrical characteristics of MOSFETs (Dynamic Characteristics Ciss/Crss/Coss)
Capacitance (C iss/C rss/C oss)
In a MOSFET, the gate is insulated by a thin silicon oxide. Therefore, a power MOSFET has capacitances between the gate-drain, gate-source and drain-source terminals as shown in the figure below.
Ciss is the input capacitance, Crss is the reverse transfer capacitance, and Coss is the output capacitance. Capacitances affect the switching performance of a MOSFET.
Data sheet description
| Characteristics | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Input capacitance | Ciss | VDS = 20 V, VGS = 0 V, f = 1 MHz | — | 7370 | 9600 | pF |
| Feedback capacitance | Crss | — | 58 | — | ||
| Output capacitance | COSS | — | 1930 | — |
Electrical Characteristics: Power MOSFET Application Notes (PDF:1,092KB)
A new window will open