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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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At what voltage should the IGBT gate be driven?
Consider driving the IGBT gate at a voltage equal to the VGE value shown in the datasheet as a test condition for the VCE(sat) and switching characteristics or at a voltage close to VGE (see the following tables). Increasing the gate-emitter voltage (VGE) reduces a margin with respect to the absolute maximum rating whereas reducing the gate-emitter voltage causes VCE(sat) to increase as shown below, increasing conduction loss. If the gate-emitter voltage is too low, a system might not operate satisfactorily because the IGBT is not driven sufficiently. Generally, we recommend a VGE level equal or close to 15 V except for special-purpose IGBTs such as those for strobe light applications.
Also, when there is a difference between the gate bias power supply voltage and the gate-emitter voltage of the IGBT, a design should be created such that the gate-emitter voltage of the IGBT becomes the above-mentioned value.
(Note: Generally, the gate-emitter voltage of an IGBT is set to zero when it is off. In some cases, however, the gate-emitter voltage is reverse-biased to stabilize the IGBT switching operation.)
Static Characteristics(Ta=25℃, unless otherwise specified)
Dynamic Characteristics(Ta=25℃, unless otherwise specified)
