Photocoupler for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment

Photocoupler for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a new photocoupler, “TLP5795H,” and expanded its lineup to control 1A to 5A class gate drive currents for small to medium-capacity MOSFET and IGBT gate drives. Shipments start today.

In recent years, with the expansion of the green energy and factory automation markets, the demand for isolated gate drivers that drive from low-voltage control side to high-voltage power devices through isolation has been increasing. In these markets, the demand for specifications that more accurately capture the driving performance of isolated gate drivers has also been increasing. In response, Toshiba has released the TLP5795H, which specifies output current characteristics IOLH and IOHL as typical values of -4.5/+5.3A (typ.). Furthermore, Toshiba is also developing[1] the TLP5794H with -6.0/+4.0A (typ.) and the TLP5791H with -1.0/+1.0A (typ.).

The TLP5795H has a performance of -4.5/+5.3A for peak high-level/low-level output current (IOLH/IOHL), with a UVLO[2] threshold voltage (VUVLO+) of 13.5V (max), a UVLO threshold voltage (VUVLO-) of 11.1V (min), and UVLO hysteresis (UVLOHYS) of 1.0V (typ.). These values are designed to drive SiC MOSFETs with a wide gate negative bias voltage rating, as well as IGBTs. It is suitable for driving power devices with a positive bias of 15 to 20V and a negative bias of approximately 0 to -10V. For details, please refer to the application note "Gate Drive Coupler Notes on using power device gate negative bias power supply". The propagation delay time has low temperature dependence, allowing for stable operation within the practical range defined by FA equipment.

Additionally, the TLP5795H is a rail to rail[3] output device that enables switching characteristics with less voltage drop from the power supply voltage.

Furthermore, by improving the light output of the input-side infrared light-emitting diode and optimizing the design of the light-receiving element (photodiode array), Toshiba has enhanced the optical coupling efficiency and achieved an operating temperature rating of -40°C to 125°C. This allows for use in industrial equipment operating in severe thermal environments, such as PV inverters, UPS[4], and EV stands. Propagation delay time and propagation delay skew are also standardized within the operating temperature rating range.

TLP5795H is housed in a small SO6L package and contributes to improved flexibility in component placement on the set board. In addition, the new product features a minimum creepage distance of 8.0mm and an isolation voltage of 5000Vrms, allowing it to be used in equipment that requires high isolation performance.

Toshiba will continue to develop and expand its lineup of photocouplers for MOSFET and IGBT gate drive applications in industrial equipment.

Figure 1.Example of IGBT gate drive application circuit
Figure 1.Example of IGBT gate drive application circuit

Notes:
[1] TLP5794H and TLP5791H are scheduled for released in June 2025.
[2] UVLO: Under Voltage Lock Out. It means the function to prevent malfunction at low voltage.
[3] Rail to rail: It refers to the ability of the output voltage to cover the entire range of the power supply voltage (from the positive power rail to the negative power rail). Useful in applications that require circuits to operate at low voltages or to process signals across the entire range of supply voltages.
[4] UPS: Uninterruptible Power Supply

Features

  1. UVLO compatible with SiC MOSFETs: 13.5V (max)
  2. Stable propagation delay time
  3. Rail to rail output[3]

Features Explanation

1. UVLO supporting SiC MOSFETs: 13.5V (max)

Figure 2. UVLO hysteresis comparison
Figure 2. UVLO hysteresis comparison

High gate voltage can be set, making it suitable for high-power applications. Additionally, the output is stabilized with a hysteresis of 1.0V (typ.), improving the overall reliability of the system.

2. Stable propagation delay time

The propagation delay time of TLP5795H is stable within the operating temperature rating of -40 to 125°C.
Moreover, it operates stably within the practical range defined by FA equipment.

Figure 3. Temperature characteristics of propagation delay time (tpLH)
Figure 3. Temperature characteristics of propagation delay time (tpLH)
Figure 4. Temperature characteristics of propagation delay time (tpHL)
Figure 4. Temperature characteristics of propagation delay time (tpHL)

3. Rail to rail output[3]

Rail to rail output allows the output voltage to be used within the range of power supply voltage.
In addition, due to the low internal resistance of the gate driver coupler, it results in low loss.
This minimizes switching losses and improves efficiency of equipment.

Applications

  • PV Inverters
  • UPS
  • EV charger stand
  • Inverter drive
  • IH cooking heaters
  • Air conditioners

Main Specifications

(Unless otherwise specified, Ta = -40 to 125°C)

Part number

TLP5795H

TLP5794H[1]

TLP5791H[1]

Package

Name

SO6L

Size (mm)

Typ.

3.84×10×2.1

Recommended
Operating
Conditions

Peak high-level/low-level output current

(L/H) IOLH, (H/L) IOHL (A)

-4.5/+5.3

-6.0/+4.0

-1/+1

Supply voltage VCC (V)

15 to 30

15 to 30

10 to 30

Electrical characteristics

UVLO threshold voltage

VUVLO+ (V)

IF=5mA, VO>2.5V

Max

13.5

13.5

9.5

UVLO threshold voltage

VUVLO- (V)

IF=5mA, VO<2.5V

Min

11.1

9.5

7.5

UVLO hysteresis

UVLOHYS (V)

-

Typ.

1.0

1.5

0.5

Switching characteristics

Propagation delay time

(L/H) tpLH, (H/L) tpHL (ns)

VCC=30V

Max

150

200

500

High-level/Low-level common-mode transient immunity

CMH, CML (kV/μs)

Ta=25°C

Min

±35

±50

±20

Isolation characteristics

Isolation voltage BVS (Vrms)

Ta=25°C

Min

5000

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