Small-signal MOSFET 2 in 1
Application Scope | Power Management Switches |
---|---|
Feature | Low drain-source on-resistance |
Polarity | N-ch×2 |
Generation | U-MOSⅧ-H |
Internal Connection | Independent |
Component Product (Q1) | SSM6N813R |
Component Product (Q2) | SSM6N813R |
PPAP | Capable(*) |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | TSOP6F |
---|---|
Package Image | |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.9×2.8×0.8 |
Package Dimensions | View |
Land pattern dimensions | View |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1/Q2) | VDSS | 100 | V |
Gate-Source voltage (Q1/Q2) | VGSS | +/-20 | V |
Drain current (Q1/Q2) | ID | 3.5 | A |
Power Dissipation | PD | 1.5 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1/Q2) (Max) | Vth | - | 2.5 | V |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=4.5V | 154 | mΩ |
Drain-Source on-resistance (Q1/Q2) (Max) | RDS(ON) | |VGS|=10V | 112 | mΩ |
Input capacitance (Q1/Q2) (Typ.) | Ciss | - | 242 | pF |
Total gate charge (Q1/Q2) (Typ.) | Qg | VGS=4.5V | 3.6 | nC |
Orderable part number (example) |
MOQ(pcs) | Reliability Information |
RoHS | AEC_Q100-Q101 | Note |
---|---|---|---|---|---|
SSM6N813R,LF | 3000 | Yes | - | General Use | |
SSM6N813R,LXGF | 3000 | - | Yes | Yes (Note) | Unintended Use (Note) |
SSM6N813R,LXHF | 3000 | - | Yes | Yes | Automotive Use |
(Note):For more information, please contact our sales or use the inquiry form on our website.
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