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3-24. Datasheets of MOSFET: Electrical Characteristics
Download "Chapter III : Transistors" (PDF:2.0MB)
＜Thermal Characteristics＞
Used to calculate channel temperature
＜Electrical characteristics＞
- Gate leakage current (IGSS)
Cut-off current from gate to source - Drain cut-off current (IDSS)
Cut-off current from drain to source - Drain-source breakdown voltage (V(BR)DSS)
Breakdown voltage between drain and source
Gate and source are shorted so as not to make a channel. - Gate threshold voltage (Vth)
Gate-source voltage that can send designated drain current - Drain source ON resistance (RDS(ON))
It corresponds to collector-emitter saturation voltage (VCE(sat)) of bipolar transistor. Voltage drop is expressed as resistance under designated condition. It has positive thermal coefficient. - Forward transfer admittance (|Yfs|)
The ratio of change of output current to change of gate input voltage. Its unit is “S: siemens”, same as [A]/[V].
Chapter III : Transistors
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