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Chapter III : Transistors : Datasheets of MOSFET: Electrical Characteristics

<Thermal Characteristics>
Used to calculate channel temperature

Thermal Characteristics

<Electrical characteristics>

  • Gate leakage current (IGSS)
    Cut-off current from gate to source
  • Drain cut-off current (IDSS)
    Cut-off current from drain to source
  • Drain-source breakdown voltage (V(BR)DSS)
    Breakdown voltage between drain and  source
    Gate and source are shorted so as not to make a channel.
  • Gate threshold voltage (Vth)
    Gate-source voltage that can send designated drain current
  • Drain source ON resistance (RDS(ON))
    It corresponds to collector-emitter saturation voltage (VCE(sat)) of bipolar transistor. Voltage drop is expressed as resistance under designated condition. It has positive thermal coefficient.
  • Forward transfer admittance (|Yfs|)
    The ratio of change of output current to change of gate input voltage. Its unit is “S: siemens”,  same as [A]/[V].
Electrical characteristics

Chapter III : Transistors

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