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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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3-2 Key characteristics for protection against ESD events(2)

Figure 3.10 Comparison of clamp voltage (V<sub>C</sub>) and first peak voltage
Figure 3.10 Comparison of clamp voltage (VC) and first peak voltage

3-2(2) Low clamp voltage (VC) and first peak voltage

Figure 3.10 shows the response waveforms of ESD protection diodes with high and low clamp voltages (VC) when an ESD waveform stipulated in IEC 61000-4-2 was applied to them. These waveforms were taken at the input of a device under protection (DUP). The ESD protection diode with a lower VC exhibits lower clamp voltage at 30 ns and 60 ns than the one with a higher VC. The smaller the area under the curve of the ESD waveform, the less damage the DUP suffers. Therefore, ESD protection diodes with low VC provide better protection against ESD pulses. In addition, some ESD protection diodes do not respond immediately after the ESD entry. Therefore, if the first peak of the ESD pulse is higher than the VC of the ESD protection diode, it might be applied to the DUP, leading to its malfunction or destruction. ESD protection diodes are designed to provide faster response than other types of protection devices. In addition, Toshiba is working on the optimization of the chip process and the internal device structure in order to further reduce the first peak voltage and therefore provide more rugged protection against the peak ESD voltage during the initial period.

3 Key electrical characteristics of TVS diodes (ESD protection diodes)

3 Key electrical characteristics of TVS diodes (ESD protection diodes)
3-1 Key characteristics for normal operation (in the absence of an ESD event)(1)
3-1 Key characteristics for normal operation (in the absence of an ESD event)(2)
3-1 Key characteristics for normal operation (in the absence of an ESD event)(3)
3-2 Key characteristics for protection against ESD events(1)
3-2 Key characteristics for protection against ESD events(3)

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