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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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Electrical characteristics of MOSFETs (Static Characteristics IGSS/IDSS/V(BR)DSS/V(BR)DXS)

Gate leakage current (I GSS)

Gate leakage current (I GSS)

The leakage current that occurs when the specified voltage is applied across gate and source with drain and source short-circuited


Drain cut-off current (I DSS)

Drain cut-off current (I DSS)
The leakage current that occurs when a voltage is applied across drain and source with gate and source short-circuited


Drain-source breakdown voltage (V (BR)DSS/V (BR)DXS)

Drain-source breakdown voltage (V (BR)DSS/V (BR)DXS)

The maximum voltage that the device is guaranteed to block between drain and source 
(BR)DSS: With gate and source short-circuited 
(BR)DSX: With gate and source reverse-biased 




Data sheet description

Characteristics Symbol Test Conditions Min Typ Max Unit
Gate leakage current IGSS VGS = ±20 V, VDS = 0 V ±0.1 µA
Drain cut-off current IDSS VDS = 40 V, VGS = 0 V 10
Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 40 V
V(BR)DSX ID = 10 mA, VGS = -20 V 25