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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
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How much gate-source voltage should be applied to drive the MOSFET?
On-resistance stated in the datasheet: RDS(ON) Apply the gate-voltage value under the measurement conditions. Or use this value as a reference.
The on-resistance between drain and source is large when the channel is not formed sufficiently at the gate threshold voltage, and it is inappropriate to set the gate threshold voltage in the on-resistance measurement condition. The gate voltage for the measurement conditions described in the datasheet is set under the condition that RDS(ON) characteristics are almost flat. Use the gate voltage for this measurement condition as a reference.
When increasing the gate-source voltage VGS, VGS including surge voltage should be within the absolute maximum rating.
Please refer to the following documents for details on MOSFET gate-voltage.