Part Number Search

Cross Reference Search

About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

Keyword Search

Parametric Search

Stock Check & Purchase

Select Product Categories

How much gate-source voltage should be applied to drive the MOSFET?

The MOSFET turns on when the gate-source voltage higher than the rated gate threshold voltage Vth is applied, as shown in the following figure.
But the drain-source on-state resistance is larger than the rated value when the gate voltage is around the threshold voltage, because the channel is insufficiently formed.
For the voltage applied to the gate, refer to the test condition voltage for drain-source on-state resistance in the datasheet.
When increasing the gate-source voltage VGS, VGS including surge voltage should be within the absolute maximum rating.

For MOSFET’s gate-source voltage, please refer to “MOSFET Gate Drive Circuit:Power MOSFET Application Notes.”

A new window will open