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HN4B102J

Power transistor for high-speed switching applications

Description

Application Scope MOS gate drivers
Features Low Satulation Voltage
Polarity NPN + PNP
Internal Connection Common emitter
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SMV
Package Image SMV
JEITA SC-74A
Package Code SOT-25
Pins 5
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×1.1
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian® in your desired CAD format (Note)

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 (Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current (Q1) IC 2 A
Collector Current (Q2) IC -1.8 A
Collector Current (Q1) ICP 8 A
Collector Current (Q2) ICP -8 A
Collector power dissipation (Q1/Q2) (mounted on FR4 board (Cu 645mm**2, glass-epoxy t=1.6mm)) PC 1.1 W
Collector-Base Voltage (Q1) VCBO 60 V
Collector-Base Voltage (Q2) VCBO -30 V
Collector-emitter voltage (Q1) VCEO 30 V
Collector-emitter voltage (Q2) VCEO -30 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
DC Current Gain hFE (Q1) (Max) hFE IC=-0.2A
VCE=-2V
500 -
DC Current Gain hFE (Q1) (Min) hFE IC=-0.2A
VCE=-2V
200 -
DC Current Gain hFE (Q2) (Max) hFE IC=0.2A
VCE=2V
500 -
DC Current Gain hFE (Q2) (Min) hFE IC=0.2A
VCE=2V
200 -
Collector Emitter Saturation Voltage (Q1) (Max) VCE(sat) IB=-20mA
IC=-0.6A
-0.2 V
Collector Emitter Saturation Voltage (Q2) (Max) VCE(sat) IB=20mA
IC=0.6A
0.14 V
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Name Date

Sep,2021

Sep,2021

 

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Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
HN4B102J(TE85L,F) 3000 Yes


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