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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability
While Schottky barrier diodes (SBDs) have advantages such as very short reverse recovery time time (trr) and low forward voltage (VF), they have disadvantages such as high leakage current. Toshiba lineup some SBDs of the product which adopted the improved structure.
The correlation between VF and IR depends on the metal used. Toshiba's lineup of low IR products is thanks to it's junction barrier Schottky (JBS) structure. In a JBS diode, the depletion region extends between the p and n- regions that are partially buried below the semiconductor surface. This reduces the electric field on the surface where defects may be present thereby reducing leakage current.
Schottky barrier diodes (JBS structure)
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