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Improved junction barrier Schottky (JBS) structure to reduce the leakage current and increase the surge current capability

While Schottky barrier diodes (SBDs) have advantages such as very short reverse recovery time time (trr) and low forward voltage (VF), they have disadvantages such as high leakage current. Toshiba lineup some SBDs of the product which adopted the improved structure.

Figure 1
Figure 2

The correlation between VF and IR depends on the metal used. Toshiba's lineup of low IR products is thanks to it's junction barrier Schottky (JBS) structure.  In a JBS diode, the depletion region extends between the p and n- regions that are partially buried below the semiconductor surface. This reduces the electric field on the surface where defects may be present thereby reducing leakage current.

Schottky barrier diodes (JBS structure)

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