Lineup Expansion of Photocouplers for MOSFET and IGBT Gate Driver Suitable for Industrial Equipment

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new photocouplers, “TLP5791H” and “TLP5794H,” expanding its lineup to control 1 to 6A class gate drive currents for small to medium-capacity MOSFET and IGBT gate drives.

In recent years, with the expansion of the green energy and factory automation markets, the demand for isolated gate drivers that drive from low-voltage control side to high-voltage power devices through isolation has been increasing. In these markets, the demand for specifications that more accurately capture the driving performance of isolated gate drivers has also been increasing. In response, Toshiba has released the TLP5791H and TLP5794H, which specify output current characteristics I_OLH and I_OHL as typical values of -1.0/+1.0A (typ.) and -6.0/+4.0A (typ.), similar to the previously released TLP5795H^[1].

The TLP5791H has a performance of -1.0/+1.0A for peak high-level/low-level output current (I_OLH/I_OHL), with a UVLO^[2] threshold voltage (V_UVLO+) of 9.5V (max), a UVLO threshold voltage (V_UVLO-) of 7.5V (min), and a UVLO hysteresis voltage (UVLO_HYS) of 0.5V (typ.), which are suitable for IGBT drive or MOSFET drive.
On the other hand, the TLP5794H has a performance of -6.0/+ 4.0A for peak high-level/low-level output current (I_OLH/I_OHL), with a UVLO threshold voltage (V_UVLO+) of 13.5V (max), a UVLO threshold voltage (V_UVLO-) of 9.5V (min), and UVLO hysteresis (UVLO_HYS) of 1.5V (typ.). These values are designed to drive SiC MOSFETs with a wide gate negative bias voltage rating, as well as IGBTs. It is suitable for driving power devices with a positive bias of 15 to 20V and a negative bias of approximately 0 to -10V. For details, please refer to the application note "Gate Drive Coupler Notes on using power device gate negative bias power supply (PDF: 1,042Kb)". The propagation delay time has low temperature dependence, allowing for stable operation within the practical range defined by FA equipment.

Furthermore, both products have enhanced optical coupling efficiency through improved light output of the infrared emitting diodes on the input side and an optimized design of the photodetector (photodiode array), achieving an operating temperature rating from -40 to 125°C. This allows for use in industrial equipment operating in severe thermal environments, such as PV inverters, UPS^[3], and EV stands. Propagation delay time and propagation delay skew are also standardized within the operating temperature rating range. TLP5791H and TLP5794H are housed in a small SO6L package and contribute to improved flexibility in component placement on the set board. In addition, the new products feature a minimum creepage distance of 8.0mm and an isolation voltage of 5000Vrms, allowing them to be used in equipment that requires high isolation performance.

Toshiba will continue to develop and expand its lineup of photocouplers for MOSFET and IGBT gate drive applications in industrial equipment.

1. UVLO suitable for IGBTs and MOSFETs: 9.5V (max) (TLP5791H)
   UVLO suitable for IGBTs and SiC MOSFETs: 13.5V (max) (TLP5794H)
2. Stable propagation delay time

The propagation delay time of the new products is stable within the operating temperature rating of -40 to 125°C. Moreover, it operates stably within the practical range defined by FA equipment.

• PV Inverters
• UPS
• EV charger stands
• Inverter drive
• IH cooking heaters
• Air conditioners

Gate Drive Coupler Notes on using power device gate negative bias power supply.(PDF: 1,042KB)