TPCC8076

EOL announced

Power MOSFET (N-ch single 30V<VDSS≤60V)

Description

Application Scope Lithium-Ion Secondary Batteries / Notebook PCs / Mobile Equipments
Polarity N-ch
Generation U-MOSⅦ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image Toshiba TPCC8076 Power MOSFET (N-ch single 30V&lt;VDSS&le;60V) product TSON Advance package image
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.1×3.3×0.85
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 33 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 27 A
Power Dissipation PD 39 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Gate threshold voltage (Min) Vth - 1.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 6.2
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 4.6
Input capacitance (Typ.) Ciss - 2500 pF
Total gate charge (Typ.) Qg VGS=10V 34 nC

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