600V Silicon Power MOSFET in DFN8×8 Package Contributing to High-Efficiency Power Supply

600V Silicon Power MOSFET in DFN8×8 Package Contributing to High-Efficiency Power Supply

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched the N-channel silicon power MOSFET "TK057V60Z1" in the DTMOSVI 600V series process, with a super junction structure. It is suitable for applications such as data center servers, switched mode power supplies for industrial equipment, and photovoltaic power conditioners.

TK057V60Z1 achieves a drain-source On-resistance of 0.047Ω (typ.)[1], which is the lowest[2] among Toshiba’s 600V silicon power MOSFETs using the DFN8×8 package.
Furthermore, the new product achieves approximately 40% lower drain-source On-resistance compared to Toshiba’s existing product TK31V60X with the same voltage rating and package. Meanwhile, the total gate charge—which is typically in a trade-off relationship with drain-source On-resistance—remains equivalent, and the gate-drain charge is reduced by approximately 32%. These improvements reduce conduction loss and switching loss, contributing to higher efficiency in power supply circuits.
Additionally, the adoption of the small surface-mount DFN8×8 package contributes to increased power density in equipment.

Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available. Online Circuit Simulator available on Toshiba’s website allows users to easily verify circuit operation without the hassle of building a simulation environment and downloading element models.

Toshiba will continue to expand the DTMOSVI series lineup to improve the efficiency of switched-mode power supplies for industrial equipment, aiming to achieve carbon neutrality.

Notes:
[1] Measurement conditions: VGS=10V, ID=15A, Ta=25°C
[2] Toshiba survey, as of November 2025.

Features

  1. Low drain-source On-resistance (RDS(ON))
  2. Low total gate charge (Qg), and low gate-drain charge (Qgd)

Explanation of Features

1. Low drain-source On-resistance (RDS(ON))

Figure 1. R<sub>DS(ON)</sub> comparison<sup>[3]</sup>
Figure 1. RDS(ON) comparison[3]

TK057V60Z1 achieves an RDS(ON) of 0.047Ω (typ.)[1], which is the lowest[2] among Toshiba’s 600V silicon power MOSFETs using the DFN8×8 package.
This helps reduce conduction loss and contributes to higher efficiency in power supply equipment. In addition, the RDS(ON) is approximately 16% lower[3] compared to similar products from competing manufacturers.

Note:
[3] Based on Toshiba’s actual measurements
      RDS(ON) measurement conditions: VGS=10V, ID=15A, Ta=25°C

2. Low total gate charge (Qg), and low gate-drain charge (Qgd)

The DTMOSVI 600V series reduces Qg and Qgd — key characteristics for switching applications such as power supply equipment — through optimized gate design and process improvements.
This helps reduce drive loss and switching loss, contributing to higher efficiency in power supply equipment.
In addition, the new product achieves approximately 4% lower Qg and approximately 28% lower[4] Qgd compared to similar products from competing manufacturers.

Figure 2. Q<sub>g</sub> comparison<sup>[4]</sup>
Figure 2. Qg comparison[4]
Figure 3. Q<sub>gd</sub> comparison<sup>[4]</sup>
Figure 3. Qgd comparison[4]

Note:
[4] Based on Toshiba’s actual measurements
      Qg and Qgd measurement conditions: VDD≈400V, VGS=10V, ID=40A, Ta=25°C

Applications

  • Switched-mode power supplies (for data center servers, etc.)
  • Photovoltaic power conditioners
  • Uninterruptible power supplies

Main Specifications

(Unless otherwise specified, Ta=25°C)

Part number TK057V60Z1
Absolute
maximum
ratings		 Drain-source voltage VDSS (V) 600
Drain current (DC) ID (A) 40
Channel temperature Tch (°C) 150
Electrical
characteristics		 Drain-source On-resistance RDS(ON) (Ω) VGS=10V,
ID=15A		 Typ. 0.047
Max 0.057
Total gate charge
(gate-source plus gate-drain)
Qg (nC)		 VDD≈400V,
VGS=10V,
ID=40A		 Typ. 65
Gate-drain charge Qgd (nC) 15
Input capacitance Ciss (pF) VDS=300V, VGS=0V, f=100kHz Typ. 3680
Package Name DFN8×8
Size (mm) Typ. 8.0×8.0×0.85
Sample Check & Availability Buy Online

Related Contents

Follow the links below for more on the new product.
TK057V60Z1

Follow the link below for more on Toshiba’s MOSFETs.
MOSFET

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