TK190E65Z

Power MOSFET (N-ch 500V<VDSS≤700V)

Description

Application Scope Switching Voltage Regulators
Polarity N-ch
Generation DTMOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TO-220
Package Image TO-220
Pins 3
Mounting Through Hole
Width×Length×Height
(mm)
10.16×15.1×4.45
Package Dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 650 V
Gate-Source voltage VGSS +/-30 V
Drain current ID 15 A
Power Dissipation PD 130 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 190
Input capacitance (Typ.) Ciss - 1370 pF
Total gate charge (Typ.) Qg VGS=10V 25 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

  • If the checkbox is invisible, the corresponding document cannot be downloaded in batch.

May,2022

Jun,2022

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Technical inquiry

Contact us

Contact us

Frequently Asked Questions

FAQs

Notes

back to list
A new window will open