SSM6J808R

Small-signal MOSFET

  • Related Reference Design(1)

Description

Application Scope Power Management Switches
Feature Low drain-source on-resistance
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name TSOP6F
Package Image TSOP6F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -40 V
Gate-Source voltage VGSS -20/+10 V
Drain current ID -7 A
Power Dissipation PD 1.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -2.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 35
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 48
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 52
Input capacitance (Typ.) Ciss - 1020 pF
Total gate charge (Typ.) Qg VGS=-10V 24.2 nC
Purchase and Sample
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You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Jan,2020

Feb,2024

Dec,2023

Feb,2024

Feb,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC_Q100-Q101 Note
SSM6J808R,LF 3000 Yes - General Use
SSM6J808R,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)
SSM6J808R,LXHF 3000 - Yes Yes Automotive Use

(Note):For more information, please contact our sales or use the inquiry form on our website.


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Frequently Asked Questions

FAQs

Notes

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