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Automotive IPDs

Toshiba’s automotive IPDs can be directly controlled by a microcontroller. In the event of a shorted load, overcurrent protection or thermal shutdown is tripped to protect an ECU in which IPDs are used. Toshiba’s automotive IPDs also have a diagnostic output that feeds back the states of their output and an ECU to a microcontroller for easy monitoring.

Product List

Intelligent Power Devices (IPDs) Product Lineup
Search the entire intelligent power device product list to find products that meet your performance specifications.

High-Side and Low-Side Power Switches

Toshiba's high-side and low-side power switches contain protection circuits for a shorted load, open load and an output short-circuit to the power supply as well as an abnormal ECU condition (overheating). These power switches also have diagnostic outputs that provide feedback to a microcontroller. Thus, they help to reduce the number of components and improve the reliability of an ECU. Toshiba's power switches are available in small packages such as SOP8, PS8 and WSON10, which contribute to reducing the ECU size.

Application Example of a High-Side Power Switch (TPD1055FA)

This figure shows the application for a High-Side Switch.

IPDs for High-Side Switch Lineup

Part Number Package
Outputs(ch)
VDSS
(V)
IO
(A)
Characteristics
Operating
Temperature
Topr
(°C)

Operating
Supply
Voltage(V)
RDS(ON)
(Ω) Max
Power
Dissipation
PD(W)
Protective Functions Diagnostic Functions
Over-
current
(A)
Over-
temperature
(°C)
Over-
voltage
(V)
Over-
current
Open
Load
Over-
temperature
TPD1052F PS-8 1 40 0.8 0.8 0.7
(mounted on
board)
1.2
(clamp)
0.8
(duty)
Min
150
Min
- - -40 to 125 5 to 18
TPD1053F SOP-8 1 60 3 0.12 1.1
(mounted on
board)
3
Min
150
Min
Active
clamp
-16 V Typ.
-40 to 125 5 to 18
TPD1055FA WSON10 1 40 3 0.12 1.84
(mounted on
board)
3
Min
150
Min
- -40 to 125 5 to 18
TPD1060F
SOP-8 1 40 3 0.12 0.9
(mounted on
board)
3
Min
150
Min
- -40 to 125 4 to 18
  • VDSS: Drain-Source Voltage (V)
  • IO: Output Current (A)
  • RDS(ON)max: Maximum On-resistance @Tch=25°C (Ω)

IPDs for Low-Side Switch Lineup

Part Number Package
Outputs
(ch)
VDSS
(V)
IO
(A)
Characteristics
Operating
TemperatureTopr
(°C)

Operating
Supply
Voltage(V)
RDS(ON)
(Ω) Max
Power
Dissipation
PD(W)
Protective Functions Diagnostic Functions
Over-
current
(A)
Over-
temperature
(°C)
Over-
voltage
(V)
Over-
current
Open
Load
Over-
temperature
TPD1030F SOP-8 2 40 1 0.6 2.0
(t = 10 s)
(mounted
on board)
1
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 110 up to 40
TPD1032F SOP-8 2 20 3 0.4 0.95
(mounted
on board)
3
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 110 up to 20
TPD1036F SOP-8 2 30 1.5 0.5 2.0
(t = 10 s)
(mounted
on board)
1.5
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 110 up to 30
TPD1044F PS-8 1 41 1 0.6 0.9
(mounted
on board)
1
Min
150
Min
Active
clamp
41V Min
- - - -40 to 125 up to 41
TPD1046F SOP-8 2 40 3 0.2 0.95
(mounted
on board)
3
Min
150
Min
Active
clamp
40 V Min
- - - -40 to 125 up to 20
TPD1054F PS-8 1 40 1 0.8 0.7
(mounted
on board)
1
Min
150
Min
Active
clamp
40 V Min
-40 to 125 VOUT =
up to 40
VDD =
4.5 to 5.5
TPD1058FA WSON10 1 40 6 0.1 1.84
(mounted
on board)
6
Min
150
Min
Active
clamp
40 V Min
-40 to 125 VOUT =
up to 40
VDD =
4.5 to 5.5
  • VDSS: Drain-Source Voltage (V)
  • IO: Output Current (A)
  • RDS(ON)max: Maximum On-resistance @Tch=25°C (Ω)

Gate Drivers

A large-current semiconductor relay switch can be built by combining a gate driver and a power MOSFET.

Reference Board

The Example for a Power MOSFET Gate Driver Application (TPD7104AF)

This figure shows an application example for TPD7104F, Power MOSFET Gate Driver.

IPDs for Power MOSFET Gate Driver Lineup

Part Number Package Configuration
Outputs
(ch)

Supply
Voltage
VDD(V)
Output
Current
IO(A)
Characteristics
Operating
TemperatureTopr
(°C)

Operating
Supply
Voltage(V)
Power
Dissipation
PD(W)
Protective Functions Diagnostic Functions
Over-
current
(A)
Overvoltage/
Undervoltage
(V)
Battery
Reverse
Protection
Over-
current
Overvoltage/
Undervoltage
Over-
voltage
Under-
voltage
Open
Load
Over-
temperature
TPD7101F SSOP-24 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
2 30 Source
current
0.1A Typ.
Sink
current
0.1A Typ.
0.8 Adjustable - VDD: 4.5 V
Max
- - -40 to 110 8 to 18
TPD7102F PS-8 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
1 25 Source
current
1mA Typ.
0.7 - VDD: 18 V
Min
- - High-side N-ch Power-
MOSFET VGS monitor
-40 to 125 7 to 18
TPD7104F PS-8 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
1 24 Source
current
Internal
capacity
Sink
current
0.5mA Max
0.7 Adjustable VOUT: VDD
+ 15.7 V
Typ.
- - - - -40 to 125 5 to 18
TPD7104AF PS-8 High-side
Power-
MOSFET
driver
(with built-in
charge pump)
1 24 Source
current
Internal
capacity
Sink
current
0.5mA Max
0.7 Adjustable VOUT: VDD
+ 15.7 V
Typ.
- - - -40 to 125 5 to 18
TPD7210F SSOP-24 Power-
MOSFET
driver for
3-phase bridge
(with built-in
charge pump)
30 Source
current
1A Max
Sink
current
1A Max
0.8 - - - - Input arm-short
detection-
-40 to 125 4.5 to 18
TPD7211F PS-8 Half-bridge
Power-
MOSFET
driver
(for high-side
P-ch
MOSFET drive)
2 30 Source
current
0.5A Max
Sink
current
0.5A Max
0.7 - - - - - - - -40 to 125 5 to 18
TPD7212F** WQFN32 Power-
MOSFET
driver for
3-phase bridge
(with built-in
charge pump)
6 25 Source
current
-1.0A Max
Sink
current
+1.5A Max
TBD - VDL: 18 V
Typ.
- - -
(VDL)

(VDH, VDL)
-40 to 125 4.5 to 18

**: Under development

* System and product names mentioned herein may be trademarks or registered trademarks of respective companies or organizations.

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