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About information presented in this cross reference

The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.

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Semiconductor relay system

Example of junction box circuit of semiconductor relay system

Semiconductor relay system

Lineup

U-MOS Series 40 V N-ch MOSFET

Part number Drain current

On-resistance (Max)

@VGS = 10 V

Package
XPN3R804NC 40 A 3.8 mΩ TSON Advance(WF)
TK1R4S04PB 120 A 1.35 mΩ DPAK+
TPHR7904PB 150 A 0.79 mΩ SOP Advance(WF)
TPWR7904PB 150 A 0.79 mΩ DSOP Advance(WF)L
TKR74F04PB 250 A 0.74 mΩ TO-220SM(W)
TK1R5R04PB 160 A 1.5 mΩ D2PAK+

Gate driver (for switch)

Part number TPD7104AF TPD7106F TPD7107F
Package PS-8 (2.8 x 2.9 mm) SSOP16 (5.5 x 6.4 mm) WSON10A (3 x 3 mm)

Features

  • Operating power supply voltage range: 5 to 18 V
  • Built-in power supply reverse connection protection function
    (Supported for power supply reverse connection protection MOSFET applications)
  • Operating power supply voltage range: 4.5 to 27 V
  • Built-in power supply reverse connection protection function
    (Supported for power supply reverse connection protection MOSFET applications)
  • Operating power supply voltage range: 5.75 to 26 V
  • Current sense output
  • Protective functions;
    overcurrent, overtemperature, GNDdisconnect etc.
    reverse battery connection
  • Diagnosis output;
    overcurrent, load open, overtemperatureetc.

General purpose small signal MOSFET

Part number SSM3K7002KF SSM3J168F SSM3J66MFV
Package

S-Mini
(SOT-346)

S-Mini
(SOT-346)

VESM
(SOT-723)

VDSS [V] 60 -60 -20
ID [A] 0.4 -0.4 -0.8

RDS(ON)

@|VGS| = 4.5 V [Ω]

Typ. 1.2 1.4 0.31
Max 1.75 1.9 0.39
Drive voltage [V] 4.5 -4.0 -1.2
Polarity N-ch P-ch P-ch

General purpose small signal bipolar transistor

Package SOT-23F

USM (SOT-323)

UFM (SOT-323F)*

S-Mini (SOT-346)
Classification |VCEO| [V] |IC| [mA] NPN PNP NPN PNP NPN PNP
General purpose 50 150     2SC4116 2SA1586 2SC2712 2SA1162
50 500         2SC3325 2SA1313
Low noise 120 100     2SC4117 2SA1587 2SC2713 2SA1163
High current 50 1700       2SA2195*    
50 2000   TTA501        
100 2500 TTC501          

Small signal bias resistor built-in transistor (BRT)

Part number NPN (BRT) PNP (BRT)
Package ES6 (SOT-563) RN1907FE RN2907FE
US6 (SOT-363) RN1901 RN2901
VCEO (Max) [V] 50 -50
IC [mA] 100 -100

TVS diode (for CAN communication)

Part number DF3D18FU DF3D29FU DF3D36FU
Package USM (SOT-323)
VESD [kV] @ISO 10605 ±30 ±30 ±20
VRWM (Max) [V] 12 24 28
Ct (Typ. / Max) [pF] 9 / 10 6.5 / 8
RDYN (Typ.) [Ω] 0.8 1.1 1.5

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