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Knowledge
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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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EOL announced
Radio-frequency SiGe Heterojunction Bipolar Transistor
Application Scope | UHF/SHF band low noise amplifier |
---|---|
Polarity | NPN |
RoHS Compatible Product(s) (#) | Available |
MT4S300T is shortly to be discontinued. For new designs, the following product(s) should be used instead of this product.
Part Number | Compatible level | Notes |
---|---|---|
MT4S300U * Please contact us about this product. |
Almost same characteristics but different package | - |
Toshiba Package Name | TESQ |
---|---|
Pins | 4 |
Mounting | Surface Mount |
Package Dimensions | View |
Land pattern dimensions | View |
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Collector Current | IC | 0.05 | A |
Collector power dissipation | PC | 100 | mW |
Junction temperature | Tj | 150 | ℃ |
Collector-emitter voltage | VCEO | 4 | V |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Insertion Gain (Typ.) | |S21|2 | f=2GHz | 18 | dB |
Transition frequency (Typ.) | fT | - | 26.5 | GHz |
Noise Figure (Typ.) | NF | f=2GHz | 0.55 | dB |
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