MT4S300T

EOL announced

Radio-frequency SiGe Heterojunction Bipolar Transistor

Description

Application Scope UHF/SHF band low noise amplifier
Polarity NPN
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TESQ
Pins 4
Mounting Surface Mount
Package Dimensions View
Land pattern dimensions View

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC 0.05 A
Collector power dissipation PC 100 mW
Junction temperature Tj 150
Collector-emitter voltage VCEO 4 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Insertion Gain (Typ.) |S21|2 f=2GHz 18 dB
Transition frequency (Typ.) fT - 26.5 GHz
Noise Figure (Typ.) NF f=2GHz 0.55 dB

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