RN2102MFV

Bias resistor built-in transistor (BRT)

  • Related Reference Design(4)

Description

Application Scope General-purpose
Polarity PNP
Internal Connection Single
Complementary Product RN1102MFV
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name SOT-723 (VESM)
Package Image VESM
JEITA SC-105AA
Package Code SOT-723
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
1.2×1.2×0.5
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

 Please refer to the link destination to check the detailed size.

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Collector Current IC -0.1 A
Collector-emitter voltage VCEO -50 V

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Base Series Resistance (Typ.) R1 - 10
Base-Emitter Resistance (Typ.) R2 - 10
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Sep,2017

Mar,2019

Sep,2024

Nov,2024

Nov,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC_Q100-Q101 Note
RN2102MFV,L3F 8000 Yes - General Use
RN2102MFV,L3XGF 8000 - Yes Yes (Note) Unintended Use (Note)
RN2102MFV,L3XHF 8000 - Yes Yes Automotive Use

(Note):For more information, please contact our sales or use the inquiry form on our website.


Reference Design

PCB photo example of Power multiplexer circuit
Power multiplexer circuit
In this reference design, a Power multiplexer circuit with 2 input and 1 output is implemented on a small PCB. MOSFET gate driver ICs, eFuse ICs, zener diodes and small package MOSFETs selected from Toshiba's diverse lineup are used create ideal diode like characteristics with BBM and MBB switching.
PCB photo example of Power multiplexer circuit
Power Multiplexer Circuit Using Common-Drain MOSFET
This power multiplexer circuit with 2 inputs and 1 output is realized on a small board. A new power multiplexer circuit usign common-drain MOSFET has been added to the already developed power multiplexer circuit reference design. These reference circuits allow switching between BBM and MBB modes by combining optimal devices such as MOSFET gate driver ICs and zener diodes from our diverse product lineup.
This is a picture of eFuse Application Circuit (with Thermal Shutdown).
eFuse Application Circuit (with Thermal Shutdown)
This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Thermal Shutdown) built on a small board. This circuit provides over temperature detection and protection by combining the eFuse IC and the ThermoflaggerTM (Over Temperature Detection IC).
This is a picture of eFuse Application Circuit (with Enhanced Overcurrent Protection).
eFuse Application Circuit (with Enhanced Overcurrent Protection)
This reference design provides design guide, data and other contents of eFuse IC Application Circuit (with Enhanced Overcurrent Protection) built on a small board.
This circuit provides precise overcurrent shutdown by combining the eFuse IC and the ThermoflaggerTM used as an overcurrent detection device.

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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