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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
Please note that this cross reference is based on TOSHIBA's estimate of compatibility with other manufacturers' products, based on other manufacturers' published data, at the time the data was collected.
TOSHIBA is not responsible for any incorrect or incomplete information. Information is subject to change at any time without notice.
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Realize low on resistance from bipolar output to DMOS output
High efficiency and high output current due to the use of DMOS FETs in the output stage.
Bipolar transistors have been used for various applications for 40 years since their invention. Since bipolar transistors require a large input current, an auxiliary circuit is sometimes necessary to drive them.
The new DMOS FET transistor arrays require considerably less input current than bipolar transistor arrays, making it easier to directly interface with an MCU. Furthermore, DMOS FET transistor arrays tolerate higher voltage and consume less power due to the reduced on-resistance of the output stage.
- Roughly 40% reduction in power loss, compared with Toshiba’s previous product series (Ta = 25°C, IOUT = 200 mA)
- Low input current: 0.1 mA (max) (VIN=3 V)
- Absolute maximum ratings of the output stage (TBD62064A and TBD62308A series)
- Output breakdown voltage: 50 V
- Output current (max): 1.5 A
- Output breakdown voltage: 50 V
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