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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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TPC6009-H

EOL announced

Power MOSFET (N-ch single 30V<VDSS≤60V)

Description

Application Scope High-Efficiency DC-DC Converters / Notebook PCs / Mobile Equipments
Polarity N-ch
Generation U-MOSⅥ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available
Assembly bases Malaysia

Package Information

Toshiba Package Name VS-6
Pins 6

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 5.3 A
Power Dissipation PD 2.2 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.3 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 98
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 81
Input capacitance (Typ.) Ciss - 225 pF
Total gate charge (Typ.) Qg VGS=10V 4.7 nC

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Name Date

Dec,2016

 

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