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600V Power MOSFET with a Built-in Fast-Recovery Diode in a DFN8×8 Package for High-Efficiency Power Supplies
Toshiba Electronic Devices & Storage Corporation ("Toshiba") has added the "TK058V60Z5" to its "DTMOSVI 600V HSD (High‑Speed Diode)" series—N‑channel power MOSFETs with a super‑junction structure and built‑in fast‑recovery diodes, suitable for switched-mode power supplies used in industrial equipment such as data‑center servers and photovoltaic power conditioners.
The new product TK058V60Z5 achieves the lowest[1] drain‑source On‑resistance of 0.050Ω (typ.)[2] among Toshiba’s 600V silicon power MOSFETs with built‑in fast‑recovery diodes in a DFN8×8 package. Together with the six products previously released, the DTMOSVI 600V HSD series now offers seven products, further expanding the range of available products.
The DTMOSVI 600V HSD series products employ lifetime control technology[3] to enhance the reverse recovery characteristics of the body diode. This improves reverse recovery performance, which is critical for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600V series products without built-in fast-recovery diodes, the reverse recovery time (trr) has been reduced by approximately 60%[4], and the reverse recovery charge (Qrr) by approximately 85%[4].
In the DTMOSVI 600V series, including the new products, optimized gate design and process reduce the figure of merit "drain-source On-resistance×total gate charge (RDS(ON)×Qg)" by approximately 36%[5], and "drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)" by approximately 52%[5] compared to Toshiba’s previous generation, the DTMOSIV-H series with the same voltage rating.
As a result, conduction, drive, and switching losses are reduced, contributing to higher efficiency in power supply circuits.
Toshiba offers tools that support circuit design for switching power supplies. Alongside the G0 SPICE model, which verifies circuit function in a short time, highly accurate G2 SPICE models that accurately reproduce transient characteristics are now available. Online Circuit Simulator available on Toshiba’s website allows users to easily verify circuit operation without the hassle of building a simulation environment and downloading element models.
Toshiba will continue to expand the lineup of its DTMOSVI series, thereby helping to reduce losses in industrial equipment such as switched-mode power supplies and contributing to the realization of a carbon-neutral society.
Notes:
[1] As of March 2026, Toshiba survey
[2] Measurement conditions: VGS=10V, ID=15A, Ta=25°C
[3] A technology that intentionally introduces defects into a semiconductor to enhance carrier recombination speed.
[4] Based on Toshiba's actual measurements (Comparison between Toshiba's existing product TK057V60Z1 and the new product TK058V60Z5.)
trr, Qrr measurement conditions: VDD=400V, VGS=0V, IDR=20A, -dIDR/dt=100A/μs, Ta=25°C
[5] Based on Toshiba's calculated estimate values
RDS(ON) measurement conditions: VGS=10V, Ta=25°C
Qg, Qgd measurement conditions: VDD≈400V, VGS=10V, Ta=25°C
Features
- Built-in fast-recovery diodes
- Low drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)
Explanation of Features
1. Built-in fast-recovery diodes
![Figure 1. Comparison of t<sub>rr</sub><sup>[4]</sup> and Q<sub>rr</sub><sup>[4]</sup> between DTMOSVI 600V HSD and existing DTMOSVI 600V](/content/dam/toshiba-ss-v3/master/en/semiconductor/product/mosfets/articles/600v-power-mosfet-with-a-built-in-fast-recovery-diode-in-a-dfn8-8-packagepforphigh-efficiency-power-supplies_01_en.png)
The new products employ lifetime control technology[3] to enhance the reverse recovery characteristics of body diodes. This improves reverse recovery performance, which is critical for bridge and inverter circuit applications. Compared to Toshiba’s existing DTMOSVI 600V series products without built-in fast-recovery diodes, the reverse recovery time (trr) has been reduced by approximately 60%[4], and the reverse recovery charge (Qrr) by approximately 85%[4].
2. Low drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)
In the DTMOSVI 600V series, including the new products, optimized gate design and process reduce the figure of merit "drain-source On-resistance×gate-drain charge (RDS(ON)×Qgd)" by approximately 52%[5] compared to Toshiba’s previous generation, the DTMOSIV-H series with the same voltage rating. As a result, conduction, drive, and switching losses are reduced, contributing to higher efficiency in power supply circuits.
Applications
- Switched-mode power supplies (for data center servers, etc.)
- Photovoltaic power conditioners
- Uninterruptible power supplies
Main Specifications
(Ta=25°C)
| Part number | TK058V60Z5 | |||
|---|---|---|---|---|
| Absolute maximum ratings |
Drain-source voltage VDSS (V) | 600 | ||
| Drain current (DC) ID (A) | 40 | |||
| Channel temperature Tch (°C) | 150 | |||
| Electrical characteristics |
Drain-source On-resistance RDS(ON) (Ω) | VGS=10V, ID=15A |
Typ. | 0.050 |
| Max | 0.058 | |||
| Total gate charge (gate-source plus gate-drain) Qg (nC) |
VDD≈400V, VGS=10V, ID=40A |
Typ. | 66 | |
| Gate-drain charge Qgd (nC) | 20 | |||
| Input capacitance Ciss (pF) | VDS=300V, VGS=0V, f=100kHz |
Typ. | 3750 | |
| Reverse recovery time trr (ns) | VDD=400V, IDR=20A, VGS=0V, -dIDR/dt=100A/μs |
Typ. | 140 | |
| Package | Name | DFN8×8 | ||
| Size (mm) | Typ. | 8.0×8.0×0.85 | ||
| Sample check & availability |  |
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Related Contents
Follow the links below for more on the new product.
TK058V60Z5
Follow the link below for more on Toshiba’s MOSFETs.
MOSFET
To check availability of the new products at online distributors, visit:
TK058V60Z5
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