Small Low ON resistance MOSFETs
Application Scope | Power Management Switches / High-Speed Switching |
---|---|
Polarity | N-ch + P-ch |
Generation | U-MOSⅢ / U-MOSⅢ |
Internal Connection | Independent |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOT-363F (UF6) |
---|---|
Package Image | |
Package Code | SOT-363F |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | View |
Land pattern dimensions | View |
CAD data (Symbol, Footprint and 3D model) |
Download from UltraLibrarian® in your desired CAD format (Note) |
Please refer to the link destination to check the detailed size.
(Note) Ultra Librarian® is a Registered trademark and CAD data library of EMA (EMA Design Automation, Inc.).
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1) | VDSS | 30 | V |
Gate-Source voltage (Q1) | VGSS | +/-20 | V |
Drain current (Q1) | ID | 1.6 | A |
Drain-Source voltage (Q2) | VDSS | -30 | V |
Gate-Source voltage (Q2) | VGSS | +/-20 | V |
Drain current (Q2) | ID | -1.4 | A |
Power Dissipation | PD | 0.5 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1) (Max) | Vth | - | 2.6 | V |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4V | 182 | mΩ |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 122 | mΩ |
Input capacitance (Q1) (Typ.) | Ciss | - | 180 | pF |
Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 5.1 | nC |
Gate threshold voltage (Q2) (Max) | Vth | - | -2.0 | V |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 226 | mΩ |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4V | 403 | mΩ |
Input capacitance (Q2) (Typ.) | Ciss | - | 120 | pF |
Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 2.9 | nC |
Contact us
Contact usFrequently Asked Questions
FAQs