SSM6L40TU

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name UF6
Package Image UF6
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 1.6 A
Drain-Source voltage (Q2) VDSS -30 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -1.4 A
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 2.6 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 182
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 122
Input capacitance (Q1) (Typ.) Ciss - 180 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 5.1 nC
Gate threshold voltage (Q2) (Max) Vth - -2.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 226
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 403
Input capacitance (Q2) (Typ.) Ciss - 120 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 2.9 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Oct,2016

Dec,2023

Mar,2024

Mar,2024

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC_Q100-Q101 Note
SSM6L40TU,LF 3000 Yes - General Use
SSM6L40TU,LXGF 3000 - Yes Yes (Note) Unintended Use (Note)

(Note):For more information, please contact our sales or use the inquiry form on our website.


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Frequently Asked Questions

FAQs

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