Small Low ON resistance MOSFETs
Application Scope | Power Management Switches / High-Speed Switching |
---|---|
Polarity | N-ch + P-ch |
Generation | U-MOSⅢ / U-MOSⅢ |
Internal Connection | Independent |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOT-363F (UF6) |
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Package Image |
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Package Code | SOT-363F |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
2.0×2.1×0.7 |
Package Dimensions | View |
Land pattern dimensions | View |
Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |
![]() Download from UltraLibrarian® in your desired CAD format |
SamacSys CAD model (Symbol, Footprint and 3D model) |
Download from SamacSys |
Please refer to the link destination to check the detailed size.
(Note1) |
Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. |
(Note2) |
SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys. |
(Note3) |
Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. |
Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1) | VDSS | 30 | V |
Gate-Source voltage (Q1) | VGSS | +/-20 | V |
Drain current (Q1) | ID | 1.6 | A |
Drain-Source voltage (Q2) | VDSS | -30 | V |
Gate-Source voltage (Q2) | VGSS | +/-20 | V |
Drain current (Q2) | ID | -1.4 | A |
Power Dissipation | PD | 0.5 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1) (Max) | Vth | - | 2.6 | V |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4V | 182 | mΩ |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=10V | 122 | mΩ |
Input capacitance (Q1) (Typ.) | Ciss | - | 180 | pF |
Total gate charge (Q1) (Typ.) | Qg | VGS=10V | 5.1 | nC |
Gate threshold voltage (Q2) (Max) | Vth | - | -2.0 | V |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-10V | 226 | mΩ |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4V | 403 | mΩ |
Input capacitance (Q2) (Typ.) | Ciss | - | 120 | pF |
Total gate charge (Q2) (Typ.) | Qg | VGS=-10V | 2.9 | nC |
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