SSM6L40TU

不推薦用於新設計

Small Low ON resistance MOSFETs

產品概要

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅢ
Internal Connection Independent
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

包裝資訊

Toshiba Package Name SOT-363F (UF6)
Package Image 東芝 SSM6L40TU Small Low ON resistance MOSFETs產品 UF6 封裝圖片
Package Code SOT-363F
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>*1 *2

Download from UltraLibrarian® in your desired CAD format
*1 *2

 Please refer to the link destination to check the detailed size.

*1

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

*2

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 1.6 A
Drain-Source voltage (Q2) VDSS -30 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -1.4 A
Power Dissipation PD 0.5 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1) (Max) Vth - 2.6 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4V 182
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 122
Input capacitance (Q1) (Typ.) Ciss - 180 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 5.1 nC
Gate threshold voltage (Q2) (Max) Vth - -2.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 226
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4V 403
Input capacitance (Q2) (Typ.) Ciss - 120 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 2.9 nC

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Oct,2016

Apr,2025

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