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The information presented in this cross reference is based on TOSHIBA's selection criteria and should be treated as a suggestion only. Please carefully review the latest versions of all relevant information on the TOSHIBA products, including without limitation data sheets and validate all operating parameters of the TOSHIBA products to ensure that the suggested TOSHIBA products are truly compatible with your design and application.
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TPCP8405

Not Recommended for New Design

Power MOSFET (N-ch + P-ch complementary)

Description

Application Scope Mobile Equipments / Motor Drivers
Polarity N-ch + P-ch
Generation U-MOSⅥ-H / U-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available
Assembly bases Japan / Malaysia

Package Information

Toshiba Package Name PS-8
Package Image PS-8
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
2.9×2.8×0.8
Package Dimensions View
Land pattern dimensions View

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 30 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 6.5 A
Drain-Source voltage (Q2) VDSS -30 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -6.0 A
Power Dissipation PD 1.48 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 29
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 26
Input capacitance (Q1) (Typ.) Ciss - 830 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 13.8 nC
Gate threshold voltage (Q2) (Max) Vth - -2.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 31.3
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 42
Input capacitance (Q2) (Typ.) Ciss - 1075 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 24.1 nC

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