SiC MOSFET Modules


Feature All SiC MOSFET type
Application High power switching (Power conversion, Motor drive)
Circuit Configuration 2in1
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name 2-153A1A
Mounting Surface Mount

 Please refer to the link destination to check the detailed size.

Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain current (DC) ID 400 A
Drain-Source voltage VDSS 1700 V
Channel temperature Tch 150

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Drain-source on-voltage(Sense terminal) (Typ.) VDS(on)sense ID=400A
0.8 V
Source-drain off-voltage(Sense terminal) (Typ.) VSD(off)sense IS=400A
1.6 V
Turn-on switching loss (Typ.) Eon - 28 mJ
Turn-off switching loss (Typ.) Eoff - 27 mJ
Reverse recovery loss (Typ.) Err - 0.7 mJ
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.


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