SSM3J120TU

Not Recommended for New Design

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches
Feature 1.5-volt gate drive voltage
Polarity P-ch
Generation U-MOSⅣ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name UFM
Package Image UFM
Package Code SOT-323F
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.1×0.7
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-8 V
Drain current ID -4.0 A
Power Dissipation PD 0.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4V 38
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 49
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 78
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 140
Input capacitance (Typ.) Ciss - 1484 pF
Total gate charge (Typ.) Qg VGS=-4V 22.3 nC

Document

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Aug,2016

Feb,2019

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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