SSM6J502NU

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches
Polarity P-ch
Generation U-MOSⅥ
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name UDFN6B
Package Image UDFN6B
Package Code SOT-1220
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
2.0×2.0×0.75
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS -20 V
Gate-Source voltage VGSS +/-8 V
Drain current ID -6.0 A
Power Dissipation PD 1.0 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - -1.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 23.1
Drain-Source on-resistance (Max) RDS(ON) |VGS|=2.5V 28.3
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.8V 38.4
Drain-Source on-resistance (Max) RDS(ON) |VGS|=1.5V 60.5
Input capacitance (Typ.) Ciss - 1800 pF
Total gate charge (Typ.) Qg VGS=-4.5V 24.8 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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May,2014

Feb,2019

Dec,2023

Mar,2024

Mar,2024

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

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