Small Low ON resistance MOSFETs
| Application Scope | Power Management Switches / High-Speed Switching | 
|---|---|
| Polarity | N-ch + P-ch | 
| Generation | U-MOSⅢ / U-MOSⅤ | 
| Internal Connection | Independent | 
| RoHS Compatible Product(s) (#) | Available | 
| Toshiba Package Name | SOT-563 (ES6) | 
|---|---|
| Package Image |   | 
| JEITA | SC-107C | 
| Package Code | SOT-563 | 
| Pins | 6 | 
| Mounting | Surface Mount | 
| Width×Length×Height (mm) | 1.6×1.6×0.55 | 
| Package Dimensions | View | 
| Land pattern dimensions | View | 
| Ultra Librarian® CAD model (Symbol, Footprint and 3D model) |   Download from UltraLibrarian® in your desired CAD format | 
| SamacSys CAD model (Symbol, Footprint and 3D model) |  Download from SamacSys | 
Please refer to the link destination to check the detailed size.
| (Note1) | Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®. | 
| (Note2) | SamacSys is a wholly owned subsidiary of Supplyframe, Inc. CAD models (Symbol/Footprint /3D model) are provided by Supplyframe, Inc. The footprints are generated based on the specifications of SamacSys. | 
| (Note3) | Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website. | 
| Characteristics | Symbol | Rating | Unit | 
|---|---|---|---|
| Drain-Source voltage (Q1) | VDSS | 20 | V | 
| Gate-Source voltage (Q1) | VGSS | +/-10 | V | 
| Drain current (Q1) | ID | 800 | mA | 
| Drain-Source voltage (Q2) | VDSS | -20 | V | 
| Gate-Source voltage (Q2) | VGSS | +/-8 | V | 
| Drain current (Q2) | ID | -720 | mA | 
| Power Dissipation | PD | 0.15 | W | 
| Characteristics | Symbol | Condition | Value | Unit | 
|---|---|---|---|---|
| Gate threshold voltage (Q1) (Max) | Vth | - | 1.0 | V | 
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.5V | 600 | mΩ | 
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.8V | 450 | mΩ | 
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=2.5V | 330 | mΩ | 
| Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4.5V | 240 | mΩ | 
| Input capacitance (Q1) (Typ.) | Ciss | - | 90 | pF | 
| Total gate charge (Q1) (Typ.) | Qg | VGS=4.5V | 2.0 | nC | 
| Gate threshold voltage (Q2) (Max) | Vth | - | -1.0 | V | 
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4.5V | 300 | mΩ | 
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-2.5V | 440 | mΩ | 
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.8V | 670 | mΩ | 
| Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.5V | 1.04 | Ω | 
| Input capacitance (Q2) (Typ.) | Ciss | - | 110 | pF | 
| Total gate charge (Q2) (Typ.) | Qg | VGS=-4.5V | 1.76 | nC | 
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