SSM6L14FE

不推薦用於新設計

Small Low ON resistance MOSFETs

產品概要

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅤ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

包裝資訊

Toshiba Package Name SOT-563 (ES6)
Package Image 東芝 SSM6L14FE Small Low ON resistance MOSFETs產品 ES6 封裝圖片
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions 檢視
Land pattern dimensions 檢視
Ultra Librarian® CAD model
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format<br>(Note1)(Note2)

Download from UltraLibrarian® in your desired CAD format
(Note1)(Note2)

 Please refer to the link destination to check the detailed size.

(Note1)

Ultra Librarian® is a Registered trademark and CAD model library of EMA (EMA Design Automation, Inc.). CAD models (Symbol/Footprint /3D model) are provided by UltraLibrarian®. The footprints are generated based on the specifications of Ultra Librarian®.

(Note2)

Please note that the footprint dimensions may differ from the reference Land Pattern dimensions provided on our website.

絕對最大額定值

項目 符號 單位
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-10 V
Drain current (Q1) ID 800 mA
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-8 V
Drain current (Q2) ID -720 mA
Power Dissipation PD 0.15 W

電器特性

項目 符號 條件 單位
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 600
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 450
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 330
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 240
Input capacitance (Q1) (Typ.) Ciss - 90 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 2.0 nC
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 300
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 440
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 670
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.5V 1.04 Ω
Input capacitance (Q2) (Typ.) Ciss - 110 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 1.76 nC

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Sep,2016

Mar,2026

Mar,2026

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