SSM6L14FE

Not Recommended for New Design

Small Low ON resistance MOSFETs

Description

Application Scope Power Management Switches / High-Speed Switching
Polarity N-ch + P-ch
Generation U-MOSⅢ / U-MOSⅤ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOT-563 (ES6)
Package Image Toshiba SSM6L14FE Small Low ON resistance MOSFETs product ES6 package image
JEITA SC-107C
Package Code SOT-563
Pins 6
Mounting Surface Mount
Width×Length×Height
(mm)
1.6×1.6×0.55
Package Dimensions View
Land pattern dimensions View
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(Note2)

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 20 V
Gate-Source voltage (Q1) VGSS +/-10 V
Drain current (Q1) ID 800 mA
Drain-Source voltage (Q2) VDSS -20 V
Gate-Source voltage (Q2) VGSS +/-8 V
Drain current (Q2) ID -720 mA
Power Dissipation PD 0.15 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 1.0 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.5V 600
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=1.8V 450
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=2.5V 330
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 240
Input capacitance (Q1) (Typ.) Ciss - 90 pF
Total gate charge (Q1) (Typ.) Qg VGS=4.5V 2.0 nC
Gate threshold voltage (Q2) (Max) Vth - -1.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 300
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-2.5V 440
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.8V 670
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-1.5V 1.04 Ω
Input capacitance (Q2) (Typ.) Ciss - 110 pF
Total gate charge (Q2) (Typ.) Qg VGS=-4.5V 1.76 nC

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Sep,2016

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