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MOSFET Product lineup

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400V - 900V MOSFETs

Highlight

  • Process technology

    Toshiba has developed the Gen-4 super-junction 600-V, 650-V and 800-V DTMOSⅣ MOSFET series. Fabricated using the state-of-the-art single epitaxial process, DTMOSⅣ provides a 30% reduction in Ron・A, a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSⅢ. A reduction in Ron・A makes it possible to house lower Ron chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies.

  • Features

    1. 30% reduction in Ron・A, a MOSFET figure of merit, compared to the predecessor (DTMOSⅢ)

    This figure compares the performance of DTMOSⅣ and its predecessor, DTMOSⅢ.

    2. Lower increase in on-resistance at high temperatures due to the use of a single epitaxial process

    This figure compares on-resistance increases at high temperatures between DTMOSⅣ and competitors' devices.

    3. 12% reduction in switching loss, Eoss, compared to the predecessor (DTMOSⅢ) owing to a reduction in Coss
    • DTMOS Ⅳ: Eoss Curve

    This figure shows the Eoss curve of DTMOSⅣ.

    • Efficiency Comparisons Among Products with the Same Ron

    This figure compares the efficiency of DTMOS series and competitors' devices with the same on-resistance.

    4. Available with a wide range of on-resistance, R DS(ON) : 0.9 Ω – 0.018 Ω max
    5. Various packaging options
    • Through-hole: TO-220, TO-220SIS, IPAK, I2PAK, TO-3P(N), TO-3P(L), TO-247
    • Surface-mount: DPAK, D2PAK

  • Development Roadmap

    This figure shows the development roadmap for the DTMOS series and competitors' devices.

  • Packaging technology

    The four-pin TO-247-4L package uses a Kelvin connection for the gate-drive source terminal in order to reduce the inductance of the internal source wiring and thereby allow a MOSFET chip to achieve a high switching speed. Power MOSFETs in the TO-247-4L package help further improve the efficiency of the high-efficiency medium to large switching power supplies (with a level required by 80 PLUS*1TITANIUM and 80 PLUS PLATINUM).read more

Lineups

N-ch Super Junction

Documents

Whitepaper

Whitepaper
Name outline Date of issue
Evolution of Devices Supporting Power
Electronics and Expansion of Technologies for
Mounting, Circuits, and Application to Products
8/2017

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Optimising power deisng through MOSFET efficiency and intergration 8/2017

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Cordless Power Tools: Delivering High Output Power, Extended Operation and Smaller Form Factors 10/2017

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Describes the features of the new package and an operation analysis using simulation 9/2017

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Application note

Application note
Name outline Date of issue
Describes planar, trench and super-junction power MOSFETs 11/2016
Describes the absolute maximum ratings, thermal impedance and safe operating area of power MOSFETs 11/2016
Describes electrical characteristics shown in datasheets 11/2016
Describes how to select power MOSFETs, temperature characteristics, the impacts of wires and parasitic oscillation, avalanche ruggedness, snubber circuits and so on 11/2016
Describes thermal equivalent circuits, examples of channel temperature calculation and considerations for heatsink attachment 2/2017
Describes the guidelines for the design of a gate driver circuit for MOSFET switching applications and presents examples of gate driver circuits 8/2017

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Describes current imbalance in parallel MOSFETs and the mechanism of parasitic oscillation 8/2017

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Describes the oscillation mechanism of MOSFETs for switching applications 8/2017

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Catalog

Catalog
Name outline Date of issue
Describes the lineups of MOSFET 9/2017
Describes the lineups of power and small-signal MOSFETs by package 3/2016

Video


Products

1) DTMOSⅣ(V DSS = 600 V) Product Lineup

2) DTMOSⅣ(VDSS = 600 V) High-Speed Switching Type product Lineup

RDS(ON)
max (Ω)
DFN8x8 TO-220 TO-220SIS TO-247 TO-247
4pin
0.125 - 0.135 TK25V60X TK25E60X TK25A60X TK25N60X TK25Z60X
0.088 - 0.098 TK31V60X TK31E60X TK31N60X TK31Z60X
0.065 TK39N60X TK39Z60X
0.040 TK62N60X TK62Z60X

3) DTMOSⅣ(VDSS = 600 V) with integrated High-Speed Diodes product Lineup

RDS(ON)
max (Ω)
DPAK D2PAK DFN8x8 TO-220 TO-220SIS TO-3P(N) TO-247
(0.99) TK5P60W5 TK5A60W5
0.65 - 0.67 TK7P60W5 TK7A60W5
0.54 - 0.56 TK8P60W5 TK8A60W5
0.45 TK10A60W5
0.23 - 0.24 TK16G60W5 TK16V60W5 TK16E60W5 TK16A60W5 TK16J60W5 TK16N60W5
0.175 - 0.185 TK20V60W5 TK20E60W5 TK20A60W5 TK20J60W5 TK20N60W5
0.14 - 0.15 TK25V60X5 TK25E60X5 TK25A60X5 TK25N60X5
0.099 - 0.109 TK31V60W5 TK31J60W5 TK31N60W5
0.074 TK39J60W5 TK39N60W5
0.045 TK62J60W5 TK62N60W5

4) DTMOSⅣ(VDSS = 650 V) product Lineup

RDS(ON)
max (Ω)
DPAK IPAK I2PAK D2PAK DFN8×8 TO-220 TO-220SIS TO-247
1.2 - 1.22 TK5P65W TK5Q65W TK5A65W
1.0 - 1.05 TK6P65W TK6Q65W TK6A65W
0.78 - 0.80
TK7P65W TK7Q65W TK7A65W
0.65 - 0.67 TK8P65W TK8Q65W TK8A65W
0.5 - 0.56 TK9P65W TK9Q65W TK9A65W
 0.39 - 0.44   TK11P65W TK11Q65W TK11A65W
0.25 TK14C65W TK14G65W TK14V65W TK14E65W TK14A65W TK14N65W
0.2 TK17C65W TK17V65W TK17E65W TK17A65W TK17N65W
0.11 TK28V65W TK28E65W TK28A65W TK28N65W
0.08 TK35A65W TK35N65W
0.055 TK49N65W

5) DTMOSⅣ(VDSS = 650 V) with integrated High-Speed Diodes product Lineup

RDS(ON)
max (Ω)
  I2PAK      D2PAK TO-220 TO-220SIS TO-247
0.3 TK14C65W5 TK14G65W5 TK14E65W5 TK14A65W5 TK14N65W5
0.23 TK17A65W5
0.13 TK28N65W5
0.095 TK35A65W5 TK35N65W5
  0.057    TK49N65W5

6) DTMOSV(VDSS = 600 V) product Lineup

RDS(ON)
max (Ω)
DPAK TO-220SIS
0.56 TK560P60Y TK560A60Y
0.38 TK380P60Y TK380A60Y
0.29 TK290P60Y TK290A60Y

7) DTMOSV(VDSS = 650 V) product Lineup

RDS(ON)
max (Ω)
DPAK TO-220SIS
0.56 TK560P65Y TK560A65Y
0.38 TK380P65Y TK380A65Y
0.29 TK290P65Y TK290A65Y

8) DTMOSⅣ(VDSS = 800 V) product Lineup

RDS(ON)
max (Ω)
TO-220 TO-220SIS
0.95 TK7E80W TK7A80W
0.55 TK10E80W TK10A80W
0.45 TK12E80W TK12A80W
0.29 TK17E80W TK17A80W
Parametric Search


MOSFETs Product Lineup

You can search the entire MOSFET portfolio for devices that meet your performance spec.

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·Before creating and producing designs and using, customers must also refer to and comply with the latest versions of all relevant TOSHIBA information and the instructions for the application that Product will be used with or for.