TK65S04N1L

Power MOSFET (N-ch single 30V<VDSS≤60V)

Description

Application Scope Automotive / Motor Drivers / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
PPAP Capable(*)
AEC-Q101 Qualified(*)
RoHS Compatible Product(s) (#) Available

*: For detail information, please contact to our sales.

Package Information

Toshiba Package Name DPAK+
Package Image DPAK+
Pins 3
Mounting Surface Mount
Width×Length×Height
(mm)
6.5×9.5×2.3
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 40 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 65 A
Power Dissipation PD 107 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 2.5 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=4.5V 7.8
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 4.3
Input capacitance (Typ.) Ciss - 2550 pF
Total gate charge (Typ.) Qg VGS=10V 39 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Oct,2014

Mar,2023

Dec,2023

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS AEC_Q100-Q101
TK65S04N1L,LQ 2000 Yes -
TK65S04N1L,LXHQ 2000 - Yes Yes

Technical inquiry

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Frequently Asked Questions

FAQs

Notes

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