TPN2010FNH

Power MOSFET (N-ch 150V<VDSS≤250V)

Description

Application Scope High-Efficiency DC-DC Converters / Switching Voltage Regulators
Polarity N-ch
Generation U-MOSⅧ-H
Internal Connection Single
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name TSON Advance
Package Image TSON Advance
Pins 8
Mounting Surface Mount
Width×Length×Height
(mm)
3.3×3.3×0.85
Package Dimensions View
Land pattern dimensions View
CAD data
(Symbol, Footprint and 3D model)
Download from UltraLibrarian<sup>®</sup> in your desired CAD format (Note) Download from UltraLibrarian® in your desired CAD format (Note)

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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage VDSS 250 V
Gate-Source voltage VGSS +/-20 V
Drain current ID 9.9 A
Power Dissipation PD 39 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Max) Vth - 4.0 V
Drain-Source on-resistance (Max) RDS(ON) |VGS|=10V 198
Input capacitance (Typ.) Ciss - 460 pF
Total gate charge (Typ.) Qg VGS=10V 7.0 nC
Purchase and Sample
Please contact one of Toshiba's official distributors or the nearest Toshiba sales office.
You can search for and purchase a small on-line sample by clicking on the following link.

Document

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Aug,2020

Mar,2021

Feb,2023

Dec,2023

(Note)

LTspice ® is a trademark and simulation software of ADI (Analog Devices, Inc.).

Orderable part number

Orderable part number
(example)
MOQ(pcs) Reliability
Information
RoHS
TPN2010FNH,L1Q 5000 Yes

Technical inquiry

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Frequently Asked Questions

FAQs

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