Small Low ON resistance MOSFETs
Application Scope | High-Speed Switching |
---|---|
Polarity | N-ch + P-ch |
Generation | U-MOSⅢ / U-MOSⅢ |
Internal Connection | Independent |
AEC-Q101 | Qualified(*) |
RoHS Compatible Product(s) (#) | Available |
*: For detail information, please contact to our sales.
Toshiba Package Name | SOT-563 (ES6) |
---|---|
Package Image | |
JEITA | SC-107C |
Package Code | SOT-563 |
Pins | 6 |
Mounting | Surface Mount |
Width×Length×Height (mm) |
1.6×1.6×0.55 |
Package Dimensions | View |
Land pattern dimensions | View |
CAD data (Symbol, Footprint and 3D model) |
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Characteristics | Symbol | Rating | Unit |
---|---|---|---|
Drain-Source voltage (Q1) | VDSS | 20 | V |
Gate-Source voltage (Q1) | VGSS | +/-10 | V |
Drain current (Q1) | ID | 500 | mA |
Drain-Source voltage (Q2) | VDSS | -20 | V |
Gate-Source voltage (Q2) | VGSS | +/-8 | V |
Drain current (Q2) | ID | -330 | mA |
Power Dissipation | PD | 0.15 | W |
Characteristics | Symbol | Condition | Value | Unit |
---|---|---|---|---|
Gate threshold voltage (Q1) (Max) | Vth | - | 1.0 | V |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.5V | 1.52 | Ω |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=1.8V | 1.14 | Ω |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=2.5V | 850 | mΩ |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=4.5V | 660 | mΩ |
Drain-Source on-resistance (Q1) (Max) | RDS(ON) | VGS=5V | 630 | mΩ |
Input capacitance (Q1) (Typ.) | Ciss | - | 46 | pF |
Total gate charge (Q1) (Typ.) | Qg | VGS=4V | 1.23 | nC |
Gate threshold voltage (Q2) (Max) | Vth | - | -1.0 | V |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-4.5V | 1.31 | Ω |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-2.8V | 1.6 | Ω |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.8V | 2.7 | Ω |
Drain-Source on-resistance (Q2) (Max) | RDS(ON) | VGS=-1.5V | 3.6 | Ω |
Input capacitance (Q2) (Typ.) | Ciss | - | 43 | pF |
Total gate charge (Q2) (Typ.) | Qg | VGS=-4V | 1.2 | nC |
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