Not Recommended for New Design

Power MOSFET (N-ch + P-ch complementary)


Application Scope Mobile Equipments / Motor Drivers
Polarity N-ch + P-ch
Generation U-MOSⅥ-H / U-MOSⅥ
Internal Connection Independent
RoHS Compatible Product(s) (#) Available

Package Information

Toshiba Package Name SOP-8
Package Image SOP-8
Pins 8
Mounting Surface Mount
Package Dimensions View
Land pattern dimensions View
CAD data
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Absolute Maximum Ratings

Characteristics Symbol Rating Unit
Drain-Source voltage (Q1) VDSS 40 V
Gate-Source voltage (Q1) VGSS +/-20 V
Drain current (Q1) ID 6.1 A
Drain-Source voltage (Q2) VDSS -40 V
Gate-Source voltage (Q2) VGSS +/-20 V
Drain current (Q2) ID -5.3 A
Power Dissipation PD 1.5 W

Electrical Characteristics

Characteristics Symbol Condition Value Unit
Gate threshold voltage (Q1) (Max) Vth - 2.3 V
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=4.5V 36
Drain-Source on-resistance (Q1) (Max) RDS(ON) VGS=10V 32
Input capacitance (Q1) (Typ.) Ciss - 850 pF
Total gate charge (Q1) (Typ.) Qg VGS=10V 14 nC
Gate threshold voltage (Q2) (Max) Vth - -2.0 V
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-10V 43
Drain-Source on-resistance (Q2) (Max) RDS(ON) VGS=-4.5V 53
Input capacitance (Q2) (Typ.) Ciss - 1105 pF
Total gate charge (Q2) (Typ.) Qg VGS=-10V 24 nC


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